Occupant protection device

ABSTRACT

An occupant protection device which can protect an occupant without delay is provided. An image taken by an imaging device is analyzed to judge whether there is an object approaching the subject car. In the case where a collision between the object and the subject car is judged to be inevitable, an airbag device is activated before the collision, whereby the occupant can be protected without delay. By using selenium for a light-receiving element of the imaging device, an accurate image can be obtained even under low illuminance. Imaging in a global shutter system leads to an accurate image with little distortion. This enables more accurate image analysis.

TECHNICAL FIELD

One embodiment of the present invention relates to an occupantprotection device. Another embodiment of the present invention relatesto a method for operating an occupant protection device.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of one embodiment of theinvention disclosed in this specification and the like relates to anobject, a method, or a manufacturing method. Another embodiment of thepresent invention relates to a process, a machine, manufacture, or acomposition (composition of matter).

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. Thus, a semiconductor element such as a transistor or adiode and a semiconductor circuit are semiconductor devices.Furthermore, a display device, a light-emitting device, a lightingdevice, an electro-optical device, an imaging device, an electronicappliance, and the like may each include a semiconductor element or asemiconductor circuit. Therefore, a display device, a light-emittingdevice, a lighting device, an electro-optical device, an imaging device,an electronic appliance, and the like may each include a semiconductordevice.

BACKGROUND ART

In recent years, airbag devices which protect occupants from the impactof car collisions have been increasingly put into practical use. Ingeneral, an airbag device has a function of protecting an occupant asfollows: when a car collision is sensed by an acceleration sensor, a gassupply device (an inflator) is operated to inflate an airbag with a gaswhich is abruptly generated by the inflator.

As airbag devices, besides the ones that are mounted on a steeringwheel, an instrument panel, and the like to protect the driver, a frontpassenger seat airbag for protecting a front passenger seat occupant, abackseat airbag for protecting a backseat occupant, and the like areknown. In addition, a side airbag for protecting an occupant from theimpact of a side collision, an airbag which deploys toward the ceiling,an air belt, i.e., a safety belt with a built-in airbag, and the likeare known.

Furthermore, so-called “smart airbags” which detect the physique of anoccupant, the position of the occupant relative to the airbag, themanner in which the safety belt is worn, the seated condition in a childsafety seat, and the like to determine whether or not to deploy theairbag, the deployment state, the deployment method, and the like arealso increasingly put into practical use.

Patent Document 1 discloses an airbag device, namely an airbag devicefor a side collision (a side airbag) in which electromagnetic waves orultrasonic waves are used for collision prediction to prevent anacceleration sensor from malfunctioning when the door is opened orclosed. Furthermore, Patent Document 2 discloses a technical idea that,from an object anticipated to collide which is imaged by an imagesensor, the impact force of a collision is estimated to optimize thetiming at which an airbag device starts to operate and the pressure inthe airbag.

PRIOR ART DOCUMENT Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    H5-345556-   [Patent Document 2] Japanese Published Patent Application No.    2003-182508

SUMMARY OF INVENTION Problem to be Solved by Invention

The collision prediction in Patent Document 1, in which electromagneticwaves or ultrasonic waves are used, provides only the distance betweenthe car and an object anticipated to collide and cannot presume theobject anticipated to collide itself; therefore, it is difficult toestimate the impact force of the collision. In the method disclosed inPatent Document 2, the accuracy in collision prediction is decreasedespecially under low illuminance, e.g., during night time becauseimaging with an existing image sensor (imaging device) is difficult.Moreover, while the car travels, as compared with the front or rearoutside view with respect to the traveling direction, the side outsideview changes fast. Thus, a side-view image taken while the car travelsis likely to have a distortion, which makes the image analysisdifficult. For this reason, the method disclosed in Patent Document 2has a problem in that the accuracy in collision prediction is decreasedespecially in use for side collision prediction.

An object of one embodiment of the present invention is to provide anoccupant protection device or the like which can protect an occupantfrom the impact of a car collision without delay. Another object is toprovide an occupant protection device or the like which can operateaccurately even under low illuminance, e.g., during night time. Anotherobject is to provide an occupant protection device or the like which canoperate accurately even while the car travels. Another object is toprovide an occupant protection device or the like which can safelyprotect an occupant. Another object is to provide a novel occupantprotection device or the like.

Note that the description of these objects does not disturb theexistence of other objects. Note that one embodiment of the presentinvention does not need to achieve all the objects. Note that otherobjects will be apparent from the description of the specification, thedrawings, the claims, and the like and other objects can be derived fromthe description of the specification, the drawings, the claims, and thelike.

Means to Solve Problem

One embodiment of the present invention is an occupant protection deviceincluding an imaging device, a control device, and an airbag device. Inthe occupant protection device, the imaging device includes alight-receiving element containing selenium and a transistor includingan oxide semiconductor, and the control device includes a means forpredicting a collision with the use of an image taken by the imagingdevice and a means for activating the airbag device.

One embodiment of the present invention is an occupant protection deviceincluding an imaging device, a control device, and an airbag device. Inthe occupant protection device, the imaging device includes alight-receiving element containing selenium and a transistor includingan oxide semiconductor, and the control device includes a means forpredicting a collision with the use of an image taken by the imagingdevice and a means for activating, before the collision, the airbagdevice on the basis of the prediction.

In the occupant protection device of one embodiment of the presentinvention, a plurality of imaging devices is preferably used.Furthermore, the imaging device preferably operates in a global shuttersystem. Furthermore, the oxide semiconductor preferably contains atleast one of In and Zn.

Note that one embodiment of the present invention can be applied notonly to cars such as an automobile and a bus but also to every movingobject. For example, it can be applied to a variety of moving objects,namely railroad vehicles such as an electric train and a locomotive,earthmoving vehicles such as a crane truck and a bulldozer, pilotedrobots, aircraft such as an airplane and a helicopter, ships,submarines, and spacecraft.

Effect of Invention

An occupant protection device or the like which can protect an occupantfrom the impact of a car collision without delay can be provided.Furthermore, an occupant protection device or the like which can operateaccurately even under low illuminance, e.g., during night time can beprovided. Furthermore, an occupant protection device or the like whichcan operate accurately even while the car travels can be provided.Furthermore, an occupant protection device which can safely protect anoccupant can be provided. Furthermore, a novel occupant protectiondevice or the like can be provided.

Note that the description of these effects does not disturb theexistence of other effects. Note that one embodiment of the presentinvention does not necessarily have all the effects. Note that othereffects will be apparent from the description of the specification, thedrawings, the claims, and the like and other effects can be derived fromthe description of the specification, the drawings, the claims, and thelike.

BRIEF DESCRIPTION OF DRAWINGS

[FIGS. 1A-1C] Views illustrating a car 100.

[FIGS. 2A-2B] Block diagrams each illustrating an occupant protectiondevice of one embodiment of the present invention.

[FIGS. 3A-3C] Views illustrating arrangement examples of imagingdevices.

[FIG. 4] A flow chart illustrating an operation example of an occupantprotection device.

[FIG. 5] A flow chart illustrating an operation example of an occupantprotection device.

[FIG. 6] A view illustrating an operation example of an occupantprotection device.

[FIG. 7] A view illustrating an operation example of an occupantprotection device.

[FIG. 8] A view illustrating an operation example of an occupantprotection device.

[FIG. 9] A view illustrating an operation example of an occupantprotection device.

[FIG. 10] A view illustrating an operation example of an occupantprotection device.

[FIG. 11] A view illustrating an operation example of an occupantprotection device.

[FIG. 12] A view illustrating an operation example of an occupantprotection device.

[FIG. 13] A view illustrating an operation example of an occupantprotection device.

[FIG. 14] A view illustrating an operation example of an occupantprotection device.

[FIG. 15] A view illustrating an operation example of an occupantprotection device.

[FIG. 16] A view illustrating an operation example of an occupantprotection device.

[FIG. 17] A view illustrating an operation example of an occupantprotection device.

[FIGS. 18A-18B] Diagrams illustrating a configuration example of animaging device.

[FIG. 19] A diagram illustrating a configuration example of a peripheralcircuit.

[FIGS. 20A-20B] Diagrams illustrating a configuration example of animaging device.

[FIGS. 21A-21C] Diagrams illustrating circuit configuration examples.

[FIG. 22] A view illustrating a structure example of an imaging device.

[FIGS. 23A-23B] Views illustrating examples of a transistor and acapacitor.

[FIG. 24] A diagram illustrating an energy band structure.

[FIGS. 25A-25B] Views illustrating examples of transistors.

[FIG. 26] A view illustrating a structure example of an imaging device.

[FIG. 27] A view illustrating a structure example of an imaging device.

[FIG. 28] A view illustrating a structure example of an imaging device.

[FIGS. 29A-29E] Cross-sectional views each illustrating a connectionmode of a photoelectric conversion element.

[FIGS. 30A1-30B3] Views illustrating examples of a bent imaging device.

[FIGS. 31A1-31C2] Views illustrating examples of transistors.

[FIGS. 32A1-32B2] Views illustrating examples of transistors.

[FIGS. 33A-33C] Views illustrating an example of a transistor.

[FIGS. 34A-34C] Views illustrating an example of a transistor.

[FIGS. 35A-35C] Views illustrating an example of a transistor.

[FIGS. 36A-36C] Views illustrating an example of a transistor.

[FIG. 37] A diagram illustrating an energy band structure.

[FIGS. 38A-38D] Cs-corrected high-resolution cross-sectional TEM imagesof a CAAC-OS and a schematic cross-sectional view of the CAAC-OS.

[FIGS. 39A-39D] Cs-corrected high-resolution plan-view TEM images of aCAAC-OS.

[FIGS. 40A-40C] Diagrams showing XRD structural analysis of a CAAC-OSand a single crystal oxide semiconductor.

[FIGS. 41A-41B] Images showing electron diffraction patterns of aCAAC-OS.

[FIG. 42] A diagram showing a change of crystal parts of an In—Ga—Znoxide owing to electron irradiation.

MODES FOR CARRYING OUT INVENTION

Embodiments of the present invention will be described in detail belowwith reference to the drawings. Note that the present invention is notlimited to the following description, and it is easily understood bythose skilled in the art that its modes and details can be modified invarious ways. In addition, the present invention should not be construedas being limited to the description of the embodiments shown below.

In each drawing described in this specification, each structure may beexaggerated in size, layer thickness, or region or omitted for clarityof the invention. Therefore, the scale is not necessarily limited to theillustrated one. Furthermore, in a top view (also referred to as “planview”), a perspective view, or the like, the illustration of somecomponents may be omitted for simplicity of the drawing. In addition,the illustration of some hidden lines or the like may be omitted.

Ordinal numbers such as “first” and “second” in this specification andthe like are used to avoid confusion between components and do notdenote any priority or order such as the order of steps or the stackingorder. Furthermore, even a term which is not assigned with any ordinalnumber in this specification and the like may be assigned with anordinal number in a claim to avoid confusion between components.Furthermore, even a term which is assigned with an ordinal number inthis specification and the like may be assigned with a different ordinalnumber in a claim. Furthermore, regarding a term which is assigned withan ordinal number in this specification and the like, the ordinal numbermay be omitted in a claim or the like.

Furthermore, an explicit expression “X and Y are connected” in thisspecification and the like means that the case where X and Y areelectrically connected, the case where X and Y are functionallyconnected, and the case where X and Y are directly connected aredisclosed in this specification and the like. Accordingly, without beinglimited to a predetermined connection relationship, e.g., a connectionrelationship shown in a drawing or a text, a connection relationshipwhich is not shown in the drawing or the text is also disclosed in thedrawing or the text.

In addition, in this specification and the like, “parallel” refers, forexample, to a state in which two straight lines are arranged at an anglegreater than or equal to −10° and less than or equal to 10°.Accordingly, the case where the angle is greater than or equal to −5°and less than or equal to 5° is also included. Similarly,“perpendicular” and “orthogonal” refer, for example, to a state in whichtwo straight lines are arranged at an angle greater than or equal to 80°and less than or equal to 100°. Accordingly, the case where the angle isgreater than or equal to 85° and less than or equal to 95° is alsoincluded.

Note that in the specification and the like, terms for describingcalculation values and measurement values, such as “identical”, “same”,“equal”, and “uniform” (including synonyms thereof), allow for a marginof error of ±20% unless otherwise specified.

Furthermore, in this specification and the like, a high power supplypotential VDD (hereinafter also referred to simply as “VDD” or “Hpotential”) means a power supply potential that is a potential higherthan a low power supply potential VSS. Similarly, the low power supplypotential VSS (hereinafter also referred to simply as “VSS” or “Lpotential”) means a power supply potential that is a potential lowerthan the high power supply potential VDD. In addition, a groundpotential can be used as VDD or VSS. For example, in the case where aground potential serves as VDD, VSS is a potential that is lower thanthe ground potential; in the case where a ground potential serves asVSS, VDD is a potential that is higher than the ground potential.

Note that the word “film” and the word “layer” can be interchanged witheach other depending on the case or circumstances. For example, the term“conductive layer” can be changed into the term “conductive film” insome cases. As another example, the term “insulating film” can bechanged into the term “insulating layer” in some cases.

Furthermore, in this specification, a trigonal or rhombohedral crystalis represented by a hexagonal crystal system.

Embodiment 1

An occupant protection device 110 of one embodiment of the presentinvention will be described with reference to drawings. FIG. 1(A) is aperspective view illustrating an external view of a car 100 includingthe occupant protection device 110. FIG. 1(B) is a top view of the car100. Note that in FIG. 1(B) and the like, the illustration of somecomponents of the car 100 is omitted for simplicity of the drawings.FIG. 1(C) is a top view of the car 100 in which airbags 108 areinflated. Furthermore, FIG. 2 shows block diagrams of the occupantprotection device 110.

<<Configuration Examples of Car 100 and Occupant Protection Device 110>>

On the front side of the car 100, an imaging device 111 a and an imagingdevice 111 b are provided. In addition, an imaging device 112 a and animaging device 112 b are provided on the right side surface. Inaddition, an imaging device 113 a and an imaging device 113 b areprovided on the left side surface. In addition, an imaging device 114 aand an imaging device 114 b are provided on the rear side.

The car 100 further includes an airbag device 131 in a steering 101 andan airbag device 132 in a dashboard 102. Furthermore, an airbag device133 a is provided in a door 103 a, and an airbag device 133 b isprovided in a door 103 b. Furthermore, an airbag device 134 a isprovided in a door 104 a, and an airbag device 134 b is provided in adoor 104 b. The car 100 further includes a control device 120.

The occupant protection device 110 includes the above-described imagingdevices, the above-described airbag devices, and the control device 120.Specifically, the imaging device 111 a, the imaging device 111 b, theimaging device 112 a, the imaging device 112 b, the imaging device 113a, the imaging device 113 b, the imaging device 114 a, and the imagingdevice 114 b are each connected to the control device 120, and theairbag device 131, the airbag device 132, the airbag device 133 a, theairbag device 133 b, the airbag device 134 a, and the airbag device 134b are each connected to the control device 120 (see FIG. 2(A)).

Note that the imaging devices and the airbag devices may be connected tothe control device 120 either by a wired connection method or by awireless connection method. A wired connection method, e.g., directconnection through a metal wiring is less affected by noise than awireless connection method, e.g., connection through wirelesscommunication. An optical fiber or the like may be used instead of themetal wiring. On the other hand, when a wireless connection method isused, the usage of wirings used for the connection can be reduced.Moreover, the flexibility of the arrangement of the imaging devices andthe airbag devices can be increased. Thus, the occupant protectiondevice 110 can be easily installed.

Furthermore, besides the imaging devices, a sensor 119 may be connectedto the control device 120 (see FIG. 2(B)). Examples of the sensor 119include an electromagnetic sensor, an ultrasonic sensor, an infraredsensor, and an acceleration sensor. A plurality of kinds of sensors 119may be connected to the control device 120.

The imaging device 111 a and the imaging device 111 b each have afunction of imaging an outside view in front of the car 100.Furthermore, the imaging device 112 a and the imaging device 112 b eachhave a function of imaging an outside view on the right side of the car100. Furthermore, the imaging device 113 a and the imaging device 113 beach have a function of imaging an outside view on the left side of thecar 100. Furthermore, the imaging device 114 a and the imaging device114 b each have a function of imaging an outside view behind the car100.

For example, images taken by the imaging device 112 a and the imagingdevice 112 b are transmitted to the control device 120. The controldevice 120 compares the images with each other to determine theposition, the speed, and the like of an object approaching the car 100from the right. For this purpose, the imaging device 112 a and theimaging device 112 b are preferably installed at the same height h fromthe ground. In addition, the distance L between the imaging device 112 aand the imaging device 112 b is 50 cm or more, preferably 1 m or more,further preferably 2 m or more. With an increase in the distance L, theaccuracy in detecting the position, the speed, and the like of an objectapproaching the car 100 can be improved. The above description alsoapplies to the imaging device 111 a and the imaging device 111 b, theimaging device 113 a and the imaging device 113 b, and the imagingdevice 114 a and the imaging device 114 b.

Alternatively, the imaging devices may be installed in the vicinity of aroof of the car 100. The imaging devices installed at higher positionscan image a more distant object. Accordingly, an object approaching thecar 100 can be detected early. FIG. 3(A) illustrates an example in whichthe imaging device 111 a, the imaging device 111 b, the imaging device112 a, and the imaging device 112 b are installed in the vicinity of theroof of the car 100.

In addition, by increasing the number of imaging devices used, theaccuracy in detecting the position, the speed, and the like of an objectapproaching the car 100 can be further improved. FIG. 3(B) and FIG. 3(C)each illustrate an example in which an imaging device 111 c is providedbetween the imaging device 111 a and the imaging device 111 b and anexample in which an imaging device 112 c is provided between the imagingdevice 112 a and the imaging device 112 b.

In the example shown in this embodiment, a plurality of imaging devicesis provided for one direction; however, one embodiment of the presentinvention is not limited thereto. Depending on the purpose or usage, itmay be possible to provide one imaging device for one direction.

<<Operation Example of Occupant Protection Device 110>>

Next, an operation example of the occupant protection device 110 will bedescribed with reference to drawings.

FIG. 4 is a flow chart illustrating the operation of the occupantprotection device 110. First, outside views are imaged by the pluralityof imaging devices which take images in specific directions (Step S310).The taken images are each transmitted to the control device 120. Usingthese images and the distance L, the control device 120 synthesizes athree-dimensional image by a triangulation method or the like (StepS320). From the above synthesized three-dimensional image, the controldevice 120 judges whether there is an object approaching the car 100(Step S330). In the case where there is no object approaching the car100, the operation flow returns to Step S310 to synthesize a newthree-dimensional image.

In the case where there is an object approaching the car 100, the objectis recognized as an object anticipated to collide. Then, the shape ofthe object anticipated to collide is checked against a database toidentify the type of the object anticipated to collide (Step S340). Forexample, the object anticipated to collide is identified as an animal, ahuman, a two-wheeled vehicle, a small-size car, a large-size car, awall, or a telephone pole. Depending on the type of the objectanticipated to collide, the object anticipated to collide has adifferent collision impact on the car 100. Note that the type of theobject anticipated to collide can be identified more accurately bycombining the three-dimensional image with an electromagnetic sensor, anultrasonic sensor, an infrared sensor, and/or the like.

Subsequently, the control device 120 estimates the collision impact fromthe type of the object anticipated to collide identified above and therelative speed (Step S350).

Subsequently, from the distance between the car 100 and the objectanticipated to collide and a change in relative speed, the controldevice 120 judges whether the object anticipated to collide will collidewith the car 100 or not (Step S360). In the case where the possibilityof the collision is judged to be low, the operation flow returns to StepS310. In the case where the possibility of the collision is judged to behigh, the control device 120 transmits, to the airbag device, a signalfor activating the airbag device to operate the airbag device (StepS370).

The ultimate pressure in the airbag is determined in accordance with thecollision impact estimated above. Proper control of the pressure in theairbag enables optimal occupant protection. Alternatively, the impactright after the collision may be detected by an acceleration sensor orthe like to adjust the pressure in the airbag. Moreover, since theairbag device can be activated before the collision, the occupant can beprotected without delay.

Furthermore, one embodiment of the present invention allows enough timefrom the activation of the airbag device to a collision. Therefore,before the collision, the airbag can be inflated by a mechanical method,e.g., by a pump; at or after the collision, the airbag can be abruptlyinflated by an inflator.

Furthermore, a plurality of inflators may be provided in the airbagdevice; for example, the pressure, the inflation speed, and the like ofthe airbag may be adjusted by sequentially operating the inflators. Inthe case where a plurality of inflators is provided in the airbagdevice, the explosive forces of the inflators may be the same as ordifferent from each other.

When a plurality of inflators is provided in the airbag device, theexplosive usage per inflator can be reduced, whereby the possibility ofa second accident due to the operation of the airbag device can bereduced. The explosion sound caused by the operation of the inflator canalso be reduced, which can ease psychological stress on the occupant.

Moreover, in the airbag device on which a plurality of inflators ismounted, even when one of the inflators malfunctions, the otherinflators can ensure the operation of the airbag device. Thus, theredundancy of the airbag device can be increased. That is, theredundancy of the occupant protection device can be increased. Accordingto one embodiment of the present invention, a highly reliable occupantprotection device which surely operates can be provided.

Furthermore, when the above-described method in which the airbag isinflated by a mechanical method, e.g., by a pump before a collision isemployed, in the case where a collision is narrowly avoided or in thecase of a minor collision for which the inflator does not need to beoperated, the airbag can be stored for reuse. Also in the airbag deviceon which a plurality of inflators is mounted, in the case where aninflator remains unused after the operation of the airbag device, theairbag can be stored for reuse. Since there is no need of replacement ofthe airbag device, the maintenance cost of the car 100 can be reduced.

Furthermore, the collision impact may be estimated using the imagingdevices before the collision, and after the collision is detected, theairbag may be inflated at a pressure, an inflation speed, and the likecorresponding to the estimated impact. At this time, the plurality ofinflators may be operated either simultaneously or sequentially.

FIG. 5 is a flow chart illustrating the operation of the occupantprotection device 110 in this case. Up to Step S350, the operation flowin FIG. 5 is similar to that in FIG. 4. Next, it is judged whether theobject anticipated to collide has collided with the car 100 or not (StepS365). In the case where a judgment is made that no collision hasoccurred, the operation flow returns to Step S310. In the case where ajudgment is made that a collision has occurred, the control device 120transmits, to the airbag device, a signal for activating the airbagdevice to operate the airbag device (Step S370).

OPERATION EXAMPLE 1

An operation example of the occupant protection device 110 in the casewhere a car 900 collides with the front of the car 100 will be describedwith reference to FIG. 6 to FIG. 8.

First, from images taken by the imaging device 111 a and the imagingdevice 111 b, the control device 120 detects the car 900 approaching thecar 100 (see FIG. 6). Subsequently, the control device 120 presumes thetype of the car 900 to be an automobile from the shape of the car 900.Furthermore, the collision impact is estimated from the type of the car900, the relative speed of the car 100 to the car 900, and the like.

When the collision is judged to be inevitable, the control device 120activates the airbag device 131 and the airbag device 132 before thecollision. Then, their respective airbags 108 start to inflate (see FIG.7). Immediately after the collision, the inflation of the respectiveairbags 108 is terminated (see FIG. 8). The pressure in the respectiveairbags 108 is determined by the estimated impact.

In this manner, the occupant can be protected from the impact of a carcollision without delay.

OPERATION EXAMPLE 2

An operation example of the occupant protection device 110 in the casewhere the car 900 collides with the right side of the car 100 will bedescribed with reference to FIG. 9 to FIG. 11.

First, from images taken by the imaging device 112 a and the imagingdevice 112 b, the control device 120 detects the car 900 approaching thecar 100 (see FIG. 9). Subsequently, the control device 120 presumes thetype of the car 900 to be an automobile from the shape of the car 900.Furthermore, the collision impact is estimated from the type of the car900, the relative speed of the car 100 to the car 900, and the like.

When the collision is judged to be inevitable, the control device 120activates the airbag device 133 a and the airbag device 133 b before thecollision. Then, their respective airbags 108 start to inflate (see FIG.10). Immediately after the collision, the inflation of both of theairbags 108 is terminated (see FIG. 11). The pressure in the respectiveairbags 108 at this time is determined by the estimated impact.

In this manner, the occupant can be protected from the impact of a carcollision without delay.

OPERATION EXAMPLE 3

An operation example of the car occupant protection device 110 in thecase where the car 900 collides with the back of the car 100 will bedescribed with reference to FIG. 12 to FIG. 14.

First, from images taken by the imaging device 114 a and the imagingdevice 114 b, the control device 120 detects the car 900 approaching thecar 100 (see FIG. 12). Subsequently, the control device 120 presumes thetype of the car 900 to be an automobile from the shape of the car 900.Furthermore, the collision impact is estimated from the type of the car900, the relative speed of the car 100 to the car 900, and the like.

When the collision is judged to be inevitable, the control device 120activates the airbag device 131, the airbag device 132, an airbag device135 a, and an airbag device 135 b before the collision. Then, theirrespective airbags 108 start to inflate (see FIG. 13). Immediately afterthe collision, the inflation of the respective airbags 108 is terminated(see FIG. 14). The pressure in the respective airbags 108 at this timeis determined by the estimated impact.

In this manner, the occupant can be protected from the impact of a carcollision without delay.

OPERATION EXAMPLE 4

An operation example of the occupant protection device 110 in the casewhere the car 900 collides with the front of the car 100 will bedescribed with reference to FIG. 15 to FIG. 17.

First, from images taken by the imaging device 111 a and the imagingdevice 111 b, the control device 120 detects the car 900 approaching thecar 100 (see FIG. 15). Subsequently, the control device 120 presumes thetype of the car 900 to be an automobile from the shape of the car 900.Furthermore, the collision impact is estimated from the type of the car900, the relative speed of the car 100 to the car 900, and the like.

Here, the airbag device 131 and the airbag device 132 each include aplurality of inflators. In addition, from the above-describedestimation, the control device 120 has made a judgment that two-stepoperation is the most appropriate.

On detecting a collision between the car 100 and the car 900, thecontrol device 120 operates a first inflator included in the airbagdevice 131 and a first inflator included in the airbag device 132 (seeFIG. 16).

Subsequently, the control device 120 operates a second inflator includedin the airbag device 131 and a second inflator included in the airbagdevice 132 (see FIG. 17).

By inflating the airbags 108 in a plurality of steps, the internalpressure and the inflation speed of the airbags 108 can be optimized.This enables optimal occupant protection.

Note that in accordance with the estimated impact, the collision anglebetween the subject car and an object anticipated to collide, and thelike, the control device 120 can determine which airbag device tooperate. For example, in the case of a collision on the right side ofthe car 100, in addition to the airbag device 133 a and the airbagdevice 133 b, the airbag device 131 or the airbag device 132 can also beoperated.

Furthermore, an airbag device whose airbag deploys toward the ceiling orthe floor may be provided in the car 100 and may be operated inaccordance with the estimated impact, the collision angle between thesubject car and an object anticipated to collide, and the like. Forexample, in the case where the control device 120 detects overturn ofthe car 100 or a possibility of overturn, the airbag may deploy towardthe ceiling or the floor.

Furthermore, a sensor for estimating the presence or absence of anoccupant, his or her seated condition, height, weight, and the like maybe installed in the car to determine which airbag device to operate, theinternal pressure and the inflation speed of a deploying airbag, and thelike.

This embodiment can be implemented in an appropriate combination withany of the structures described in the other embodiments.

Embodiment 2

In this embodiment, an imaging device 115 which can be used as theimaging device shown in Embodiment 1 will be described with reference todrawings.

<<Configuration Example of Imaging Device 115>>

FIG. 18(A) is a plan view illustrating a configuration example of theimaging device 115. The imaging device 115 includes a pixel portion 140,a first circuit 260, a second circuit 270, a third circuit 280, and afourth circuit 290. Note that in this specification and the like, thefirst circuit 260 to the fourth circuit 290 and the like may be referredto as “peripheral circuit” or “driver circuit”. For example, the firstcircuit 260 can be regarded as part of the peripheral circuit.

FIG. 18(B) is a diagram illustrating a configuration example of thepixel portion 140. The pixel portion 140 includes a plurality of pixels141 (imaging elements) arranged in a matrix with p columns and q rows (pand q are each a natural number greater than or equal to 2). Note thatin FIG. 18(B), n is a natural number greater than or equal to 1 and lessthan or equal to p, and m is a natural number greater than or equal to 1and less than or equal to q.

For example, with the pixels 141 arranged in a 1920×1080 matrix, theimaging device 115 can take an image with so-called “full highdefinition” (also referred to as “2K resolution”, “2K1K”, “2K”, or thelike). Furthermore, for example, with the pixels 141 arranged in a4096×2160 matrix, the imaging device 115 can take an image withso-called “ultra-high definition” (also referred to as “4K resolution”,“4K2K”, “4K”, or the like). Furthermore, for example, with the pixels141 arranged in a 8192'4320 matrix, the imaging device 115 can take animage with so-called “super high definition” (also referred to as “8Kresolution”, “8K4K”, “8K”, or the like). With a larger number of pixels141, the imaging device 115 can take an image with 16K or 32Kresolution.

The first circuit 260 and the second circuit 270 are connected to theplurality of pixels 141 and have a function of supplying signals fordriving the plurality of pixels 141. The first circuit 260 may furtherhave a function of processing an analog signal output from the pixels141. Furthermore, the third circuit 280 may have a function ofcontrolling the operation timing of the peripheral circuit, e.g., afunction of generating a clock signal. It may further have a function ofconverting the frequency of a clock signal supplied from the outside.Moreover, the third circuit 280 may have a function of supplying areference potential signal (e.g., a ramp wave signal).

FIG. 19 illustrates a configuration example of the first circuit 260.The first circuit 260 illustrated as an example in FIG. 19 includes asignal processing circuit 261, a column driver circuit 262, and anoutput circuit 263. The signal processing circuit 261 includes a circuit264 provided in each column. Furthermore, the circuit 264 includes acircuit 264 a that can remove noise by a CDS (Correlated DoubleSampling) method (also referred to as “CDS circuit”), a counter circuit264 b, and a latch circuit 264 c. Furthermore, the circuit 264 has ananalog-digital conversion function. The signal processing circuit 261can function as a column-parallel (column type) analog-digitalconversion device.

The circuit 264 a includes a comparator, a switch, and a capacitor. Twoinput terminals of the comparator are connected to each other via theswitch. Note that a transistor, a MEMS (Micro Electro MechanicalSystems) element, or the like may be used as the switch. Furthermore,one terminal of the comparator is connected to a wiring 267 via thecapacitor. The other terminal of the comparator is connected to a wiring123 provided in each column. Note that the other terminal of thecomparator and the wiring 123 may be connected to each other via acapacitor.

The circuit 264 a has a function of comparing the potential of an analogsignal (imaging data) input from the wiring 123 with that of a referencepotential signal (e.g., a ramp wave signal) input from the wiring 267and outputting an H potential or an L potential. A clock signal from awiring 268 and the H potential or the L potential output from thecircuit 264 a are input to the counter circuit 264 b. The countercircuit 264 b measures the length of a period in which the H potentialor the L potential is input and outputs the measurement result to thelatch circuit 264 c as a digital signal with an N-bit digital value. Inaddition, a set signal or a reset signal is input from a wiring 265 tothe counter circuit 264 b. The latch circuit 264 c has a function ofholding the digital signal. In addition, a set signal or a reset signalis input from a wiring 266 to the latch circuit 264 c.

The column driver circuit 262 is also referred to as a column selectioncircuit, a horizontal driver circuit, or the like. The column drivercircuit 262 generates a selection signal for selecting a column fromwhich the imaging data held in the latch circuit 264 c is to be read.The column driver circuit 262 can be formed using a shift register orthe like. Columns are sequentially selected by the column driver circuit262, and the imaging data output from the latch circuits 264 c in theselected columns is input to the output circuit 263 through a wiring269. The wiring 269 can function as a horizontal transfer line.

The imaging data input to the output circuit 263 is processed in theoutput circuit 263 and output to the outside of the imaging device 115.The output circuit 263 can be formed using a buffer circuit, forexample. Furthermore, the output circuit 263 may have a function ofcapable of controlling the timing at which a signal is output to theoutside of the imaging device 115.

Furthermore, the second circuit 270 has a function of generating andoutputting a selection signal for selecting the pixel 141 from which asignal is to be read. Note that the second circuit 270 may also bereferred to as a row selection circuit or a vertical driver circuit. Inthis manner, imaging data that is an analog signal can be converted to adigital signal with an N-bit digital value to be output to the outside.

The peripheral circuit includes at least one of a logic circuit, aswitch, a buffer, an amplifier circuit, and a converter circuit.Furthermore, transistors or the like used for the peripheral circuit maybe formed using part of a semiconductor that is formed to manufacture apixel driver circuit 112 described later. Furthermore, a semiconductordevice such as an IC chip may be used as part or the whole of theperipheral circuit.

Note that in the peripheral circuit, at least one of the first circuit260 to the fourth circuit 290 may be omitted. For example, one of thefirst circuit 260 and the fourth circuit 290 may be omitted by adding afunction of the one of the first circuit 260 and the fourth circuit 290to the other of the first circuit 260 and the fourth circuit 290. Asanother example, one of the second circuit 270 and the third circuit 280may be omitted by adding a function of the one of the second circuit 270and the third circuit 280 to the other of the second circuit 270 and thethird circuit 280. As another example, when one of the first circuit 260to the fourth circuit 290 additionally has functions of the othercircuits in the peripheral circuit, the other circuits in the peripheralcircuit may be omitted.

Furthermore, as illustrated in FIG. 20, the pixel portion 140 may beprovided above the first circuit 260 to the fourth circuit 290 so as tooverlap with them. FIG. 20(A) is a top view of the imaging device 115 inwhich the pixel portion 140 is formed above the first circuit 260 to thefourth circuit 290 so as to overlap with them. Furthermore, FIG. 20(B)is a perspective view for explaining the configuration of the imagingdevice 115 illustrated in FIG. 20(A).

By providing the pixel portion 140 above the first circuit 260 to thefourth circuit 290 so as to overlap with them, the area occupied by thepixel portion 140 with respect to the size of the imaging device 115 canbe increased. Accordingly, the light sensitivity of the imaging device115 can be improved. Furthermore, the dynamic range of the imagingdevice 115 can be improved. Furthermore, the resolution of the imagingdevice 115 can be improved. Furthermore, the quality of an imagecaptured by the imaging device 115 can be raised. Furthermore, theintegration degree of the imaging device 115 can be improved.

<<Circuit Configuration Example of Pixel 141>>

FIG. 21(A) to FIG. 21(C) each illustrate a circuit 610 as an example ofa circuit that can be used as the pixel 114.

Note that the term “over” or “under” in this specification and the likedoes not necessarily mean that a component is placed directly over ordirectly under and in direct contact with another component. Forexample, the expression “an electrode B over an insulating layer A” doesnot necessarily mean that the electrode B is formed over and in directcontact with the insulating layer A and does not exclude the case whereanother component is provided between the insulating layer A and theelectrode B.

Furthermore, functions of a source and a drain may be interchanged witheach other depending on operation conditions or the like, for example,in the case where a transistor having opposite polarity is employed orin the case where the direction of current flow is changed in circuitoperation. Thus, it is difficult to define which is a source or a drain.Accordingly, the terms “source” and “drain” used in this specificationcan be interchanged with each other.

Furthermore, a voltage refers to a potential difference between a givenpotential and a reference potential (e.g., a ground potential or asource potential) in many cases. Thus, a voltage can also be referred toas a potential.

[Example 1 of Pixel Circuit]

The circuit 610 illustrated in FIG. 21(A) includes a photoelectricconversion element 601, a transistor 602, a transistor 604, and acapacitor 606. One of a source and a drain of the transistor 602 iselectrically connected to the photoelectric conversion element 601, andthe other of the source and the drain of the transistor 602 iselectrically connected to a gate of the transistor 604 through a node607.

A transistor in which an oxide semiconductor is used for a semiconductorlayer in which a channel is formed (also referred to as “OS transistor”)is preferably used as the transistor 602.

In an OS transistor, a current that flows between a source and a drainwhen the transistor is in an off state (also referred to as “off-statecurrent”) can be extremely low; thus, the capacitor 606 can be small.Alternatively, the capacitor 606 can be omitted as illustrated in FIG.21(B). Furthermore, when an OS transistor is used as the transistor 602,the potential of the node 607 is less likely to fluctuate. Thus, animaging device which is less likely to be affected by noise can beprovided.

Note that an OS transistor may be used as the transistor 602. Note thatin the circuit diagrams of this specification and the like, “OS” issometimes added to the circuit symbol of a transistor to show that an OStransistor is preferably used as the transistor.

A diode element in which a PN junction or a PIN junction is formed in asilicon substrate can be used as the photoelectric conversion element601. Alternatively, a PIN diode element or the like in which anamorphous silicon film, a microcrystalline silicon film, or the like isused may be used. Alternatively, a diode-connected transistor may beused. Alternatively, a variable resistor or the like utilizing aphotoelectric effect may be formed using silicon, germanium, selenium,or the like.

Furthermore, the photoelectric conversion element may be formed using amaterial capable of generating a charge by absorbing a radiation.Examples of the material capable of generating a charge by absorbing aradiation include lead iodide, mercury iodide, gallium arsenide, CdTe,and CdZn.

[Example 2 of Pixel Circuit]

FIG. 21(C) illustrates the circuit 610 in which a photodiode is used asthe photoelectric conversion element 601. The circuit 610 illustrated inFIG. 21(C) includes the photoelectric conversion element 601, thetransistor 602, a transistor 603, the transistor 604, a transistor 605,and the capacitor 606. One of a source and a drain of the transistor 602is electrically connected to a cathode of the photoelectric conversionelement 601, and the other terminal is electrically connected to thenode 607 (charge accumulation portion). An anode of the photoelectricconversion element 601 is electrically connected to a wiring 611. One ofa source and a drain of the transistor 603 is electrically connected tothe node 607, and the other terminal is electrically connected to awiring 608. A gate of the transistor 604 is electrically connected tothe node 607, one of a source and a drain is electrically connected tothe node 607 and a wiring 609, and the other terminal is electricallyconnected to one of a source and a drain of the transistor 605. Theother of the source and the drain of the transistor 605 is electricallyconnected to the wiring 608. One electrode of the capacitor 606 iselectrically connected to the node 607, and the other electrode iselectrically connected to the wiring 611.

The transistor 602 can function as a transfer transistor. A gate of thetransistor 602 is supplied with a transfer signal TX. The transistor 603can function as a reset transistor. A gate of the transistor 603 issupplied with a reset signal RST. The transistor 604 can function as anamplifier transistor. The transistor 605 can function as a selectiontransistor. A gate of the transistor 605 is supplied with a selectionsignal SEL. Moreover, VDD is supplied to the wiring 608, and VSS issupplied to the wiring 611.

Next, the operation of the circuit 610 illustrated in FIG. 21(C) will bedescribed. First, the transistor 603 is turned on, so that VDD issupplied to the node 607 (reset operation). Then, the transistor 603 isturned off, so that VDD is held at the node 607. Next, the transistor602 is turned on, so that the potential of the node 607 is changed inaccordance with the amount of light received by the photoelectricconversion element 601 (accumulation operation). After that, thetransistor 602 is turned off, so that the potential of the node 607 isheld. Next, the transistor 605 is turned on, so that a potentialcorresponding to the potential of the node 607 is output from the wiring609 (selection operation). By measuring the potential of the wiring 609,the amount of light received by the photoelectric conversion element 601can be determined.

OS transistors are preferably used as the transistor 602 and thetransistor 603. Since the off-state current of an OS transistor can beextremely low as described above, the capacitor 606 can be small.Alternatively, the capacitor 606 can be omitted. Furthermore, when OStransistors are used as the transistor 602 and the transistor 603, thepotential of the node 607 is less likely to fluctuate. Thus, an imagingdevice which is less likely to be affected by noise can be provided.

<<Global Shutter System, Rolling Shutter System>>

In this manner, the imaging device 115 performs imaging by controllingthe whole pixel portion 140 in which the reset operation, theaccumulation operation, and the selection operation of every pixel 141are repeatedly performed. As imaging methods in which the whole pixelportion 140 is controlled, a global shutter system and a rolling shuttersystem are known.

In the global shutter system, the reset operation and the accumulationoperation are performed substantially at the same time in all the pixels141, and then, a read operation is sequentially performed row by row.Therefore, a favorable image with little distortion can be obtained evenin the case of a moving object.

In the rolling shutter system, in contrast, the accumulation operationis not performed at the same time in all the pixels 141 but issequentially performed row by row. Thus, since the timing of imaging inthe first row is different from that in the last row, simultaneousimaging in all the pixels 141 is not ensured. Consequently, an imagewith large distortion is obtained in the case of a moving object.

To achieve the global shutter system, the potential of the chargeaccumulation portion needs to be held for a long time until sequentialreading of signals from the pixels is terminated. When OS transistorsare used as the transistor 602 and the transistor 603, for example, thepotential of the charge accumulation portion can be held for a longtime. In contrast, in the case where transistors whose channel formationregions are formed using silicon or the like are used as the transistor602 and the transistor 603, for example, the potential of the chargeaccumulation portion cannot be held for a long time because of theirhigh off-state current, which makes it difficult to use the globalshutter system.

As described above, the use of the OS transistor for the pixel 141 makesit easy to realize the global shutter system.

This embodiment can be implemented in an appropriate combination withany of the structures described in the other embodiments.

Embodiment 3

In this embodiment, an example of the case where the imaging device 115shown in the above embodiment includes a CMOS image sensor that is akind of solid-state imaging device will be described with reference todrawings. FIG. 22 shows a cross-sectional view of part of the pixel 141included in the imaging device 115 and a cross-sectional view of aperipheral circuit region 252 which is part of the peripheral circuit.Furthermore, FIG. 23(A) shows an enlarged view of the transistor 602.Similarly, FIG. 23(B) shows an enlarged view of the capacitor 606.Similarly, FIG. 25(A) shows an enlarged view of a transistor 281.Similarly, FIG. 25(B) shows an enlarged view of a transistor 282. Notethat the structure of the transistor 602 shown in this embodiment can beused for the other transistors shown in the above embodiment.

In the imaging device 115 described as an example in this embodiment, ann-type semiconductor is used for a substrate 401. Furthermore, a p-typesemiconductor 221 of the photoelectric conversion element 601 isprovided in the substrate 401. Furthermore, part of the substrate 401functions as an n-type semiconductor 223 of the photoelectric conversionelement 601.

In addition, the transistor 281 is provided on the substrate 401. Thetransistor 281 can function as a p-channel transistor. Furthermore, ap-type semiconductor well 220 is provided in part of the substrate 401.The well 220 can be provided by a method similar to that for forming thep-type semiconductor 221. The well 220 and the p-type semiconductor 221can be formed at the same time. Furthermore, the transistor 282 isprovided on the well 220. The transistor 282 can function as ann-channel transistor. Channels of the transistor 281 and the transistor282 are formed in the substrate 401.

Furthermore, an insulating layer 403 is formed over the photoelectricconversion element 601, the transistor 281, and the transistor 282, andan insulating layer 404 is formed over the insulating layer 403.

The insulating layer 403 can be formed as a single layer or a stackcontaining an oxide material such as aluminum oxide, magnesium oxide,silicon oxide, silicon oxynitride, gallium oxide, germanium oxide,yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide,hafnium oxide, or tantalum oxide, a nitride material such as siliconnitride, silicon nitride oxide, aluminum nitride, or aluminum nitrideoxide, or the like. The insulating layer 403 can be formed by asputtering method, a CVD method, a thermal oxidation method, a coatingmethod, a printing method, or the like.

The insulating layer 404 can be formed using a material and a methodsimilar to those of the insulating layer 403. Note that the insulatinglayer 403 and the insulating layer 404 are preferably formed using aninsulating material that has a function of preventing diffusion ofimpurities such as oxygen, hydrogen, water, alkali metal, and alkalineearth metal. Note that either the insulating layer 403 or the insulatinglayer 404 may be omitted or another insulating layer may be stackedthereover.

Furthermore, in the imaging device 115 shown in this embodiment, aninsulating layer 405 having a flat surface is provided over theinsulating layer 404. The insulating layer 405 can be formed using amaterial and a method similar to those of the insulating layer 403. Itis also possible to use a low-dielectric constant material (a low-kmaterial), a siloxane-based resin, PSG (phosphosilicate glass), BPSG(borophosphosilicate glass), or the like for the insulating layer 405.In addition, the surface of the insulating layer 405 may be subjected tochemical mechanical polishing (CMP) treatment (hereinafter also referredto as “CMP treatment”). The CMP treatment can reduce unevenness of asurface of a material and improve coverage with an insulating layer or aconductive layer formed later.

In addition, an opening 224 is formed in regions of the insulatinglayers 403 to 405 which overlap with the substrate 401 (the n-typesemiconductor 223), and an opening 225 is formed in regions of theinsulating layers 403 to 405 which overlap with the p-type semiconductor221. Furthermore, contact plugs 406 are formed in the opening 224 andthe opening 225. The contact plugs 406 are formed by filling theopenings provided in the insulating layers with a conductive material.As the conductive material, for example, a conductive material with highembeddability, such as tungsten or polysilicon, can be used.Furthermore, although not illustrated, the side surface and the bottomsurface of the material can be covered with a barrier layer (a diffusionprevention layer), namely a titanium layer, a titanium nitride layer, astack of these layers, or the like. In this case, the barrier film maybe regarded as part of the contact plug. Note that regarding the opening224 and the opening 225, there is no particular limitation on the numberand arrangement. Thus, an imaging device with high layout flexibilitycan be provided.

Furthermore, a wiring 421 and a wiring 429 are formed over theinsulating layer 405. The wiring 421 is electrically connected to then-type semiconductor 223 via the contact plug 406 provided in theopening 224. Similarly, the wiring 429 is electrically connected to thep-type semiconductor 221 via the contact plug 406 provided in theopening 225.

Furthermore, an insulating layer 407 is formed to cover the wiring 421and the wiring 429. The insulating layer 407 can be formed using amaterial and a method similar to those of the insulating layer 405. Inaddition, a surface of the insulating layer 407 may be subjected to CMPtreatment. The CMP treatment can reduce unevenness of a surface of amaterial and improve coverage with an insulating layer or a conductivelayer formed later.

The wiring 421 and the wiring 429 can each have a single-layer structureor a stacked-layer structure formed using a metal such as aluminum,titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum,manganese, silver, tantalum, or tungsten or an alloy containing it as amain component. Examples include a single-layer structure of a copperfilm containing manganese, a two-layer structure in which an aluminumfilm is stacked over a titanium film, a two-layer structure in which analuminum film is stacked over a tungsten film, a two-layer structure inwhich a copper film is stacked over a copper-magnesium-aluminum alloyfilm, a two-layer structure in which a copper film is stacked over atitanium film, a two-layer structure in which a copper film is stackedover a tungsten film, a three-layer structure in which a titanium filmor a titanium nitride film is formed, an aluminum film or a copper filmis stacked over the titanium film or the titanium nitride film, andanother titanium film or another titanium nitride film is formedthereover, a three-layer structure in which a molybdenum film or amolybdenum nitride film is formed, an aluminum film or a copper film isstacked over the molybdenum film or the molybdenum nitride film, andanother molybdenum film or another molybdenum nitride film is formedthereover, and a three-layer structure in which a copper film is stackedover a tungsten film and another tungsten film is formed thereover.Furthermore, an alloy film or a nitride film in which aluminum iscombined with one or more elements selected from titanium, tantalum,tungsten, molybdenum, chromium, neodymium, and scandium may be used.

Note that a conductive material containing oxygen, such as indium tinoxide (ITO), zinc oxide, indium oxide containing tungsten oxide, indiumzinc oxide containing tungsten oxide, indium oxide containing titaniumoxide, indium tin oxide containing titanium oxide, indium zinc oxide, orindium tin oxide to which silicon oxide is added, or a conductivematerial containing nitrogen, such as titanium nitride or tantalumnitride, may be used. It is also possible to use a stacked-layerstructure in which a material containing the above metal element iscombined with the conductive material containing oxygen. It is alsopossible to use a stacked-layer structure in which a material containingthe above metal element is combined with the conductive materialcontaining nitrogen. It is also possible to use a stacked-layerstructure in which a material containing the above metal element iscombined with the conductive material containing oxygen and theconductive material containing nitrogen.

The transistor 602, a transistor 289, and the capacitor 606 are formedover the insulating layer 407 with an insulating layer 408 and aninsulating layer 409 positioned therebetween. Besides the transistor602, a non-illustrated transistor or the like can also be formed overthe insulating layer 407 with the insulating layer 408 and theinsulating layer 409 positioned therebetween. Note that in the exampleshown in this embodiment, the transistor 602, the transistor 289, andthe like are each a top-gate transistor; however, a bottom-gatetransistor may also be used.

Alternatively, an inverted staggered transistor or a forward staggeredtransistor can also be used as the transistors. It is also possible touse a dual-gate transistor, in which a semiconductor layer in which achannel is formed is interposed between two gate electrodes.Furthermore, the transistors are not limited to the ones having asingle-gate structure; a multi-gate transistor having a plurality ofchannel formation regions, such as a double-gate transistor, may beused.

Furthermore, as the transistors, transistors with a variety ofstructures, such as a planar type, a FIN type, and a TM-GATE type, canbe used.

The above transistors may have similar structures or differentstructures. The transistor size (e.g., the channel length and thechannel width) or the like of each transistor may be adjusted asappropriate. In the case where all of the plurality of transistorsincluded in the imaging device 115 have the same structure, thetransistors can be manufactured concurrently in the same process.

The transistor 602 includes an electrode 243 that can function as a gateelectrode, an electrode 244 that can function as one of a sourceelectrode and a drain electrode, an electrode 245 that can function asthe other of the source electrode and the drain electrode, an insulatinglayer 117 that can function as a gate insulating layer, and asemiconductor layer 242 (see FIG. 23(A)).

Note that in FIG. 22, the electrode 245 is formed to be used not only asthe electrode 245 that functions as the other of the source electrodeand the drain electrode of the transistor 602 but also as an electrodethat can function as one electrode of the capacitor 606. However, oneembodiment of the present invention is not limited thereto. Theelectrode that functions as the other of the source electrode and thedrain electrode of the transistor 602 and the electrode that canfunction as the one electrode of the capacitor 606 may be formed usingdifferent electrodes.

Furthermore, the capacitor 606 has a structure in which the electrode245 that can function as the one electrode of the capacitor 606 and anelectrode 273 that can function as the other electrode overlap with eachother with an insulating layer 277 and a semiconductor layer 272 cpositioned therebetween (see FIG. 23(B)). In addition, the electrode 273can be formed at the same time as the electrode 243. Furthermore, theinsulating layer 277 and the semiconductor layer 272 c can function as adielectric. In addition, the insulating layer 277 can be formed at thesame time as the insulating layer 117. In addition, the semiconductorlayer 272 c can be formed at the same time as a semiconductor layer 242c. Note that either the insulating layer 277 or the semiconductor layer272 c may be omitted.

The insulating layer 408 is preferably formed using an insulatingmaterial that has a function of preventing diffusion of impurities suchas oxygen, hydrogen, water, alkali metal, and alkaline earth metal.Examples of the insulating material include silicon oxide, siliconoxynitride, silicon nitride, silicon nitride oxide, gallium oxide,hafnium oxide, yttrium oxide, aluminum oxide, and aluminum oxynitride.Note that when silicon nitride, gallium oxide, hafnium oxide, yttriumoxide, aluminum oxide, or the like is used as the insulating material,impurities diffused from the photoelectric conversion element 601 sidecan be prevented from reaching the semiconductor layer 242. Note thatthe insulating layer 408 can be formed by a sputtering method, a CVDmethod, an evaporation method, a thermal oxidation method, or the like.As the insulating layer 408, a single layer or a stack of any of thesematerials can be used.

The insulating layer 409 can be formed using a material and a methodsimilar to those of the insulating layer 403. In addition, in the casewhere an oxide semiconductor is used for the semiconductor layer 242, aninsulating layer containing oxygen in excess of oxygen in thestoichiometric composition is preferably used to form the insulatinglayer 409. From the insulating layer containing oxygen in excess ofoxygen in the stoichiometric composition, part of the oxygen is releasedby heating. The insulating layer containing oxygen in excess of oxygenin the stoichiometric composition is an insulating layer of which theamount of released oxygen converted into oxygen atoms is greater than orequal to 1.0×10¹⁸ atoms/cm³, preferably greater than or equal to3.0×10²⁰ atoms/cm³ in TDS analysis in which heat treatment is performedsuch that the surface temperature of the insulating layer is higher thanor equal to 100° C. and lower than or equal to 700° C., preferablyhigher than or equal to 100° C. and lower than or equal to 500° C.

Moreover, the insulating layer containing oxygen in excess of oxygen inthe stoichiometric composition can be formed by treatment for addingoxygen to the insulating layer. The treatment for adding oxygen can beperformed by heat treatment in an oxygen atmosphere or performed with anion implantation apparatus, an ion doping apparatus, or a plasmatreatment apparatus. As a gas for adding oxygen, an oxygen gas of ¹⁶O₂,¹⁸O₂, or the like, a nitrous oxide gas, an ozone gas, or the like can beused. Note that in this specification, the treatment for adding oxygenis also referred to as “oxygen doping treatment”.

Semiconductor layers of the transistor 602, the transistor 289, and thelike can be formed using a single crystal semiconductor, apolycrystalline semiconductor, a microcrystalline semiconductor, ananocrystalline semiconductor, a semi-amorphous semiconductor, anamorphous semiconductor, or the like. For example, amorphous silicon ormicrocrystalline germanium can be used. Alternatively, a compoundsemiconductor such as silicon carbide, gallium arsenide, an oxidesemiconductor, or a nitride semiconductor, an organic semiconductor, orthe like can be used.

In this embodiment, an oxide semiconductor is used for the semiconductorlayer 242. In addition, the semiconductor layer 242 may be a singlelayer or a stack of a plurality of layers. Note that in the case wherethe semiconductor layer 242 is a stack of a plurality of layers,semiconductor materials of the same kind may be stacked, or differentkinds of semiconductor materials may be stacked. In this embodiment, thecase where the semiconductor layer 242 is a stack of a semiconductorlayer 242 a, a semiconductor layer 242 b, and the semiconductor layer242 c will be described.

In this embodiment, the semiconductor layer 242 a, the semiconductorlayer 242 b, and the semiconductor layer 242 c are formed using amaterial containing In and/or Ga. Typical examples are an In—Ga oxide(an oxide containing In and Ga), an In—Zn oxide (an oxide containing Inand Zn), and an In-M-Zn oxide (an oxide containing In, an element M, andZn; the element M is one or more kinds of elements selected from Al, Ti,Ga, Y, Zr, La, Ce, Nd, and Hf and refers to a metal element whosebonding strength with oxygen is higher than that of In).

The semiconductor layer 242 a and the semiconductor layer 242 c arepreferably formed using a material containing one or more kinds of metalelements that are the same as metal elements contained in thesemiconductor layer 242 b. With the use of such a material, interfacestates can be prevented from being generated at an interface between thesemiconductor layer 242 a and the semiconductor layer 242 b and aninterface between the semiconductor layer 242 c and the semiconductorlayer 242 b. Accordingly, carriers are unlikely to be scattered orcaptured at the interfaces, which results in an improvement in thefield-effect mobility of the transistor. Furthermore, variation in thethreshold voltage of the transistor can be reduced. Thus, asemiconductor device having favorable electrical characteristics can beobtained.

The semiconductor layer 242 a and the semiconductor layer 242 c eachhave a thickness greater than or equal to 3 nm and less than or equal to100 nm, preferably greater than or equal to 3 nm and less than or equalto 50 nm. In addition, the semiconductor layer 242 b has a thicknessgreater than or equal to 3 nm and less than or equal to 200 nm,preferably greater than or equal to 3 nm and less than or equal to 100nm, further preferably greater than or equal to 3 nm and less than orequal to 50 nm.

Furthermore, when the semiconductor layer 242 b is an In-M-Zn oxide andthe semiconductor layer 242 a and the semiconductor layer 242 c are eachalso an In-M-Zn oxide, the semiconductor layer 242 a and thesemiconductor layer 242 c each contain In, M, and Zn at x₁:y₁:z₁ [atomicratio] and the semiconductor layer 242 b contains In, M, and Zn atx₂:y₂:z₂ [atomic ratio].

In this case, the semiconductor layer 242 a, the semiconductor layer 242c, and the semiconductor layer 242 b are selected such that y₁/x₁ islarger than y₂/x₂. It is preferable that the semiconductor layer 242 a,the semiconductor layer 242 c, and the semiconductor layer 242 b areselected such that y₁/x₁ is 1.5 times or more of y₂/x₂. It is furtherpreferable that the semiconductor layer 242 a, the semiconductor layer242 c, and the semiconductor layer 242 b are selected such that yi/xi istwice or more of y₂/x₂. It is still further preferable that thesemiconductor layer 242 a, the semiconductor layer 242 c, and thesemiconductor layer 242 b are selected such that yi/xi is three times ormore of y₂/x₂. At this time, yi is preferably larger than or equal to xiin the semiconductor layer 242 b, in which case the transistor can havestable electrical characteristics. However, when y₁ is three times ormore of x₁, the field-effect mobility of the transistor is reduced;therefore, y₁ is preferably smaller than three times x₁. When thesemiconductor layer 242 a and the semiconductor layer 242 c each havethe above composition, the semiconductor layer 242 a and thesemiconductor layer 242 c can each be a layer in which oxygen vacanciesare less likely to be generated than in the semiconductor layer 242 b.

Note that when the semiconductor layer 242 a and the semiconductor layer242 c are each an In-M-Zn oxide, the content percentages of In and theelement M, excluding Zn and O, are as follows: preferably, the contentpercentage of In is lower than 50 atomic % and that of the element M ishigher than or equal to 50 atomic %; further preferably, the contentpercentage of In is lower than 25 atomic % and that of the element M ishigher than or equal to 75 atomic %. Furthermore, when the semiconductorlayer 242 b is an In-M-Zn oxide, the content percentages of In and theelement M, excluding Zn and O, are as follows: preferably, the contentpercentage of In is higher than or equal to 25 atomic % and that of theelement M is lower than 75 atomic %; further preferably, the contentpercentage of In is higher than or equal to 34 atomic % and that of theelement M is lower than 66 atomic %.

For example, an In—Ga—Zn oxide which is formed using a target having anatomic ratio of In:Ga:Zn=1:3:2, 1:3:4, 1:3:6, 1:6:4, 1:9:6, or the like,an In—Ga oxide which is formed using a target having an atomic ratio ofIn:Ga=1:9 or the like, or gallium oxide can be used for thesemiconductor layer 242 a which contains In or Ga and the semiconductorlayer 242 c which contains In or Ga. Furthermore, an In—Ga—Zn oxidewhich is formed using a target having an atomic ratio of In:Ga:Zn=3:1:2,1:1:1, 5:5:6, 4:2:4.1, or the like can be used for the semiconductorlayer 242 b. Note that the atomic ratios of the semiconductor layer 242a, the semiconductor layer 242 b, and the semiconductor layer 242 c mayeach have variation within an error range of ±20% of the above atomicratio.

To give stable electrical characteristics to the transistor in which thesemiconductor layer 242 b is used, the semiconductor layer 242 b ispreferably highly purified and made intrinsic by reducing impurities andoxygen vacancies therein so that the semiconductor layer 242 b can beregarded as an intrinsic or substantially intrinsic oxide semiconductorlayer. Furthermore, the semiconductor layer 242 b is preferably asemiconductor layer in which at least the channel formation region canbe regarded as intrinsic or substantially intrinsic.

Note that the substantially intrinsic oxide semiconductor layer refersto an oxide semiconductor layer in which the carrier density is lowerthan 8×10¹¹/cm³ or lower than 1×10¹¹/cm³ and higher than or equal to1×10⁻⁹/cm³.

[Energy Band Structure of Oxide Semiconductor]

Here, the function and effect of the semiconductor layer 242 that is astack of the semiconductor layer 242 a, the semiconductor layer 242 b,and the semiconductor layer 242 c will be described with reference to anenergy band structure diagram illustrated in FIG. 24. FIG. 24 is anenergy band structure diagram of a portion indicated by dashed-dottedline C1-C2 in FIG. 23(A). FIG. 24 illustrates the energy band structureof the channel formation region of the transistor 602.

In FIG. 24, Ec382, Ec383 a, Ec383 b, Ec383 c, and Ec386 denote theenergy of the conduction band minimum of the insulating layer 409, thatof the semiconductor layer 242 a, that of the semiconductor layer 242 b,that of the semiconductor layer 242 c, and that of the insulating layer117, respectively.

Here, an energy difference between the vacuum level and the conductionband minimum (also referred to as “electron affinity”) corresponds to avalue obtained by subtracting an energy gap from an energy differencebetween the vacuum level and the valence band maximum (also referred toas an ionization potential). Note that the energy gap can be measuredwith a spectroscopic ellipsometer (UT-300; HORIBA JOBIN YVON S.A.S.). Inaddition, the energy difference between the vacuum level and the valenceband maximum can be measured with an ultraviolet photoelectronspectroscopy (UPS) device (VersaProbe; ULVAC-PHI, Inc.).

Note that an In—Ga—Zn oxide formed using a target with an atomic ratioof In:Ga:Zn=1:3:2 has an energy gap of approximately 3.5 eV and anelectron affinity of approximately 4.5 eV. In addition, an In—Ga—Znoxide formed using a target with an atomic ratio of In:Ga:Zn=1:3:4 hasan energy gap of approximately 3.4 eV and an electron affinity ofapproximately 4.5 eV. In addition, an In—Ga—Zn oxide formed using atarget with an atomic ratio of In:Ga:Zn=1:3:6 has an energy gap ofapproximately 3.3 eV and an electron affinity of approximately 4.5 eV.In addition, an In—Ga—Zn oxide formed using a target with an atomicratio of In:Ga:Zn=1:6:2 has an energy gap of approximately 3.9 eV and anelectron affinity of approximately 4.3 eV. In addition, an In—Ga—Znoxide formed using a target with an atomic ratio of In:Ga:Zn=1:6:8 hasan energy gap of approximately 3.5 eV and an electron affinity ofapproximately 4.4 eV. In addition, an In—Ga—Zn oxide formed using atarget with an atomic ratio of In:Ga:Zn=1:6:10 has an energy gap ofapproximately 3.5 eV and an electron affinity of approximately 4.5 eV.In addition, an In—Ga—Zn oxide formed using a target with an atomicratio of In:Ga:Zn=1:1:1 has an energy gap of approximately 3.2 eV and anelectron affinity of approximately 4.7 eV. In addition, an In—Ga—Znoxide formed using a target with an atomic ratio of In:Ga:Zn=3:1:2 hasan energy gap of approximately 2.8 eV and an electron affinity ofapproximately 5.0 eV.

Since the insulating layer 409 and the insulating layer 117 areinsulators, Ec382 and Ec386 are closer to the vacuum level (each have asmaller electron affinity) than Ec383 a, Ec383 b, and Ec383 c.

Furthermore, Ec383 a is closer to the vacuum level than Ec383 b.Specifically, Ec383 a is preferably closer to the vacuum level thanEc383 b by 0.05 eV or more, 0.07 eV or more, 0.1 eV or more, or 0.15 eVor more and 2 eV or less, 1 eV or less, 0.5 eV or less, or 0.4 eV orless.

Furthermore, Ec383 c is closer to the vacuum level than Ec383 b.Specifically, Ec383 c is preferably closer to the vacuum level thanEc383 b by 0.05 eV or more, 0.07 eV or more, 0.1 eV or more, or 0.15 eVor more and 2 eV or less, 1 eV or less, 0.5 eV or less, or 0.4 eV orless.

Furthermore, mixed regions are formed in the vicinity of the interfacebetween the semiconductor layer 242 a and the semiconductor layer 242 band in the vicinity of the interface between the semiconductor layer 242b and the semiconductor layer 242 c; thus, the energy of the conductionband minimum continuously changes. In other words, no or few statesexist at these interfaces.

Accordingly, electrons transfer mainly through the semiconductor layer242 b in the stacked-layer structure having the energy band structure.Therefore, even when a state exists at an interface between thesemiconductor layer 242 a and the insulating layer 409 or an interfacebetween the semiconductor layer 242 c and the insulating layer 117, thestate hardly influences the electron transfer. In addition, no or fewstates exist at the interface between the semiconductor layer 242 a andthe semiconductor layer 242 b and the interface between thesemiconductor layer 242 c and the semiconductor layer 242 b; thus, theelectron transfer is not interrupted in these regions. Accordingly, withthe above stacked-layer structure of the oxide semiconductors, thetransistor 602 can have high field-effect mobility.

Note that, as illustrated in FIG. 24, trap states 390 due to impuritiesor defects might be formed in the vicinity of the interface between thesemiconductor layer 242 a and the insulating layer 409 and the interfacebetween the semiconductor layer 242 c and the insulating layer 117;however, the semiconductor layer 242 b can be separated from the trapstates owing to the existence of the semiconductor layer 242 a and thesemiconductor layer 242 c.

Furthermore, for example, a top surface and a side surface of thesemiconductor layer 242 b formed over the semiconductor layer 242 a maybe covered with the semiconductor layer 242 c. In this manner, thesemiconductor layer 242 b is covered with the semiconductor layer 242 aand the semiconductor layer 242 c, whereby the influence of the abovetrap states can be further reduced.

However, in the case where an energy difference between Ec383 a or Ec383c and Ec383 b is small, an electron in the semiconductor layer 242 bmight reach the trap state by passing over the energy difference. Sincethe electron is trapped at the trap state, a negative fixed charge isgenerated at the interface with the insulating layer, causing thethreshold voltage of the transistor to be shifted in the positivedirection.

Therefore, the energy difference between Ec383 a and Ec383 b and thatbetween Ec383 c and Ec383 b are each preferably 0.1 eV or more, furtherpreferably 0.15 eV or more, in which case a change in the thresholdvoltage of the transistor can be reduced and the transistor can havefavorable electrical characteristics.

Furthermore, the bandgaps of the semiconductor layer 242 a and thesemiconductor layer 242 c are preferably wider than the bandgap of thesemiconductor layer 242 b.

According to one embodiment of the present invention, a transistor withsmall variation in electrical characteristics can be provided.Accordingly, a semiconductor device with small variation in electricalcharacteristics can be provided. According to one embodiment of thepresent invention, a transistor with favorable reliability can beprovided. Accordingly, a semiconductor device with favorable reliabilitycan be provided.

Moreover, an oxide semiconductor has a bandgap of 2 eV or more;therefore, a transistor in which an oxide semiconductor is used for asemiconductor layer in which a channel is formed can have an extremelylow off-state current. Specifically, the off-state current permicrometer of channel width at room temperature can be lower than1×10⁻²⁰ A, preferably lower than 1×10⁻²² A, further preferably lowerthan 1×10^(<24) A. That is, the on/off ratio can have 20 digits or moreand 150 digits or less.

According to one embodiment of the present invention, a transistor withlow power consumption can be provided. Accordingly, an imaging device ora semiconductor device with low power consumption can be provided.

Moreover, since an OS transistor has a very low off-state current, theuse of an OS transistor as the transistor 602 enables a reduction in thesize of the capacitor 606. Thus, the light-receiving area of thephotoelectric conversion element 601 can be increased. Furthermore, theuse of an OS transistor as the transistor 602 can lead to a reduction inunintended current (also referred to as “leakage current” or “leakcurrent”) that flows between the source and the drain. Accordingly, thepower consumption of the imaging device 115 can be reduced. In addition,noise occurring at the electrode 244 and the electrode 245 can bereduced, whereby the quality of an image taken by the imaging device 115can be improved. Furthermore, the imaging device 115 with highreliability can be provided.

According to one embodiment of the present invention, an imaging deviceor a semiconductor device with high light sensitivity can be provided.Furthermore, according to one embodiment of the present invention, animaging device or a semiconductor device with a wide dynamic range canbe provided.

Furthermore, since an oxide semiconductor has a wide bandgap, asemiconductor device in which an oxide semiconductor is used can be usedin a wide range of ambient temperature.

According to one embodiment of the present invention, an imaging deviceor a semiconductor device which can operate in a wide temperature rangecan be provided.

Note that the above-described three-layer structure is an example. Forexample, a two-layer structure in which either the semiconductor layer242 a or the semiconductor layer 242 c is not formed may be employed.

[Oxide Semiconductor]

Here, an oxide semiconductor which can be used for the semiconductorlayer 242 will be described in detail.

<Structure of Oxide Semiconductor>

The structure of an oxide semiconductor will be described below.

Oxide semiconductors are classified into a single crystal oxidesemiconductor and a non-single crystal oxide semiconductor. Examples ofa non-single crystal oxide semiconductor include a CAAC-OS (C AxisAligned Crystalline Oxide Semiconductor), a polycrystalline oxidesemiconductor, an nc-OS (nanocrystalline Oxide Semiconductor), anpseudo-amorphous oxide semiconductor (a-like OS: amorphous like OxideSemiconductor), and an amorphous oxide semiconductor.

From another perspective, oxide semiconductors are classified into anamorphous oxide semiconductor and a crystalline oxide semiconductor.Examples of a crystalline oxide semiconductor include a single crystaloxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor,and an nc-OS.

It is known that an amorphous structure is generally defined as being ina metastable state and unfixed, being isotropic and having nonon-uniform structure, and so on. In other words, that structure has aflexible bond angle and a short-range order but does not have along-range order.

Conversely, an inherently stable oxide semiconductor cannot be called acompletely amorphous oxide semiconductor. Moreover, an oxidesemiconductor that is not isotropic (e.g., the one with a periodicstructure in a microscopic region) cannot be called a completelyamorphous oxide semiconductor. Note that although having a periodicstructure in a microscopic region, an a-like OS contains a void space(also referred to as a void) and has an unstable structure. For thisreason, its physical properties are similar to those of an amorphousoxide semiconductor.

<CAAC-OS>

First, a CAAC-OS will be described.

A CAAC-OS is one of oxide semiconductors having a plurality of c-axisaligned crystal parts (also referred to as pellets).

In a combined analysis image (also referred to as a high-resolution TEMimage) of a bright-field image and a diffraction pattern of a CAAC-OS,which is observed with a transmission electron microscope (TEM), aplurality of pellets can be recognized. On the other hand, in thehigh-resolution TEM image, a boundary between pellets, that is, acrystal grain boundary (also referred to as a grain boundary) cannot beclearly recognized. Thus, in the CAAC-OS, a reduction in electronmobility due to the crystal grain boundary is less likely to occur.

A CAAC-OS observed with a TEM will be described below. FIG. 38(A) showsa high-resolution TEM image of a cross section of the CAAC-OS which wasobserved from a direction substantially parallel to a sample surface.For the observation of the high-resolution TEM image, a sphericalaberration corrector function was used. The high-resolution TEM imageobtained with the spherical aberration corrector function isparticularly referred to as a Cs-corrected high-resolution TEM image.The Cs-corrected high-resolution TEM image can be obtained with, forexample, an atomic resolution analytical electron microscope JEM-ARM200Fmanufactured by JEOL Ltd.

FIG. 38(B) shows an enlarged Cs-corrected high-resolution TEM image of aregion (1) in FIG. 38(A). FIG. 38(B) indicates that metal atoms arearranged in a layered manner in a pellet. Each metal atom layer has aconfiguration reflecting unevenness of a surface over which a CAAC-OSfilm is formed (also referred to as a formation surface) or its topsurface, and is parallel to the formation surface or the top surface ofthe CAAC-OS.

As shown in FIG. 38(B), the CAAC-OS has a characteristic atomicarrangement. The characteristic atomic arrangement is denoted by anauxiliary line in FIG. 38(C). FIG. 38(B) and FIG. 38(C) prove that thesize of a pellet is greater than or equal to 1 nm or greater than orequal to 3 nm and that the space between pellets caused by the tilt isapproximately 0.8 nm. Therefore, the pellet can also be referred to as ananocrystal (nc). Furthermore, the CAAC-OS can also be referred to as anoxide semiconductor including CANC (C-Axis Aligned nanocrystals).

Here, according to the Cs-corrected high-resolution TEM images, thearrangement of pellets 5100 of a CAAC-OS over a substrate 5120 isschematically illustrated as a structure in which bricks or blocks arestacked (see FIG. 38(D)). The part in which the pellets are tilted asobserved in FIG. 38(C) corresponds to a region 5161 shown in FIG. 38(D).

In addition, FIG. 39(A) shows a Cs-corrected high-resolution plan-viewTEM image of a CAAC-OS observed from a direction substantiallyperpendicular to a sample surface. FIG. 39(B), FIG. 39(C), and FIG.39(D) show an enlarged Cs-corrected high-resolution TEM image of aregion (1), that of a region (2), and that of a region (3) in FIG.39(A), respectively. FIG. 39(B), FIG. 39(C), and FIG. 39(D) indicatethat metal atoms are arranged in a triangular, quadrangular, orhexagonal configuration in a pellet. However, there is no regularity ofarrangement of metal atoms between different pellets.

Next, a CAAC-OS analyzed by X-ray diffraction (XRD) will be described.For example, when the structure of a CAAC-OS including an InGaZnO₄crystal is analyzed by an out-of-plane method, a peak may appear at adiffraction angle (2θ) of around 31° as shown in FIG. 40(A). This peakis derived from the (009) plane of the InGaZnO₄ crystal, which canconfirm that crystals in the CAAC-OS have c-axis alignment and that thec-axes are aligned in a direction substantially perpendicular to theformation surface or the top surface.

Note that in structural analysis of the CAAC-OS by an out-of-planemethod, another peak may appear when 2θ is around 36°, in addition tothe peak at 2θ of around 31°. The peak at 2θ of around 36° indicatesthat a crystal having no c-axis alignment is included in part of theCAAC-OS. It is preferable that in the CAAC-OS analyzed by anout-of-plane method, a peak appear when 2θ is around 31° and no peakappear when 2θ is around 36°.

On the other hand, in structural analysis of the CAAC-OS by an in-planemethod in which an X-ray is incident from a direction substantiallyperpendicular to the c-axis, a peak appears when 2θ is around 56°. Thispeak is derived from the (110) plane of the InGaZnO₄ crystal. In thecase of the CAAC-OS, even when analysis (ϕ scan) is performed with 2θfixed at around 56° while the sample is rotated using a normal vector ofthe sample surface as an axis (ϕ axis), no clear peak appears as shownin FIG. 40(B). In contrast, in the case where a single crystal oxidesemiconductor of InGaZnO₄ is subjected to ϕ scan with 2θ fixed at around56°, six peaks which are derived from crystal planes equivalent to the(110) plane are observed as shown in FIG. 40(C). Accordingly, thestructural analysis using XRD can confirm that the a-axes and the b-axesare irregularly oriented in the CAAC-OS.

Next, a CAAC-OS analyzed by electron diffraction will be described. Forexample, when an electron beam with a probe diameter of 300 nm isincident on a CAAC-OS including an InGaZnO₄ crystal in a directionparallel to the sample surface, a diffraction pattern (also referred toas a selected-area transmission electron diffraction pattern) shown inFIG. 41(A) may be obtained. This diffraction pattern includes spotsattributed to the (009) plane of the InGaZnO₄ crystal. Thus, theelectron diffraction also indicates that pellets included in the CAAC-OShave c-axis alignment and that the c-axes are aligned in a directionsubstantially perpendicular to the formation surface or the top surface.Meanwhile, FIG. 41(B) shows a diffraction pattern obtained in such amanner that an electron beam with a probe diameter of 300 nm is incidenton the same sample perpendicularly to the sample surface. In FIG. 41(B),a ring-like diffraction pattern can be recognized. Thus, the electrondiffraction also indicates that the a-axes and the b-axes of the pelletsincluded in the CAAC-OS do not have orientation. Note that the firstring in FIG. 41(B) is probably attributed to the (010) plane, the (100)plane, and the like of the InGaZnO₄ crystal. In addition, the secondring in FIG. 41(B) is probably attributed to the (110) plane and thelike.

As described above, the CAAC-OS is an oxide semiconductor with highcrystallinity. Entry of impurities, formation of defects, or the likemight decrease the crystallinity of an oxide semiconductor. Conversely,the CAAC-OS can be regarded as an oxide semiconductor with fewimpurities and defects (e.g., oxygen vacancies).

Note that an impurity means an element other than the main components ofan oxide semiconductor, such as hydrogen, carbon, silicon, or atransition metal element. For example, silicon, which is an elementhaving higher bonding strength with oxygen than a metal elementcontained in an oxide semiconductor, extracts oxygen from the oxidesemiconductor, which results in disorder of the atomic arrangement ofthe oxide semiconductor and a reduction in crystallinity. In addition, aheavy metal such as iron or nickel, argon, carbon dioxide, or the likehas a large atomic radius (or molecular radius), and thus disturbs theatomic arrangement of the oxide semiconductor and decreasescrystallinity.

The characteristics of an oxide semiconductor having impurities ordefects might be changed by light, heat, or the like. For example,impurities contained in the oxide semiconductor might serve as carriertraps or carrier generation sources. Furthermore, oxygen vacancies inthe oxide semiconductor might serve as carrier traps or serve as carriergeneration sources when hydrogen is captured therein.

The CAAC-OS having few impurities and oxygen vacancies is an oxidesemiconductor with low carrier density. Specifically, such an oxidesemiconductor can have a carrier density lower than 8×10¹¹/cm³,preferably lower than 1×10¹¹/cm³, further preferably lower than1×10¹⁰/cm³, and higher than or equal to 1×10⁻⁹ /cm³. Such an oxidesemiconductor is referred to as a highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor. A CAAC-OShas a low impurity concentration and a low defect state density. Thatis, it can be referred to as an oxide semiconductor having stablecharacteristics.

<nc-OS>

Next, an nc-OS will be described.

A high-resolution TEM image of an nc-OS includes a region in which acrystal part can be recognized and a region in which no clear crystalpart can be recognized. In most cases, the size of a crystal partincluded in the nc-OS is greater than or equal to 1 nm and less than orequal to 10 nm, or greater than or equal to 1 nm and less than or equalto 3 nm. Note that an oxide semiconductor including a crystal part whosesize is greater than 10 nm and less than or equal to 100 nm is referredto as a microcrystalline oxide semiconductor in some cases. In ahigh-resolution TEM image of the nc-OS, for example, a crystal grainboundary cannot be clearly recognized in some cases. Note that there isa possibility that the origin of the nanocrystal is the same as that ofa pellet in a CAAC-OS. Therefore, a crystal part of the nc-OS may behereinafter referred to as a pellet.

In the nc-OS, a microscopic region (e.g., a region which is larger thanor equal to 1 nm and smaller than or equal to 10 nm, in particular, aregion which is larger than or equal to 1 nm and smaller than or equalto 3 nm) has a periodic atomic arrangement. Furthermore, there is noregularity of crystal orientation between different pellets in thenc-OS. Thus, the orientation of the whole film is not observed.Accordingly, in some cases, the nc-OS cannot be distinguished from ana-like OS or an amorphous oxide semiconductor, depending on an analysismethod. For example, in the case where the nc-OS is analyzed by anout-of-plane method using an X-ray beam with a larger diameter than apellet, a peak which indicates a crystal plane is not detected.Furthermore, a diffraction pattern like a halo pattern is observed whenthe nc-OS is subjected to electron diffraction using an electron beamwith a larger probe diameter (e.g., 50 nm or larger) than a pellet.Meanwhile, spots are observed when the nc-OS is subjected to nanobeamelectron diffraction using an electron beam with a probe diameter thatis close to or smaller than the size of a pellet. In addition, when thenc-OS is subjected to nanobeam electron diffraction, regions with highluminance in a circular (ring) pattern are observed in some cases.Moreover, a plurality of spots is observed in a ring-like region in somecases.

Since there is no regularity of crystal orientation between pellets(nanocrystals) as described above, the nc-OS can also be referred to asan oxide semiconductor including RANC (Random Aligned nanocrystals) oran oxide semiconductor including NANC (Non-Aligned nanocrystals).

The nc-OS is an oxide semiconductor having higher regularity than anamorphous oxide semiconductor. Therefore, the nc-OS has a lower defectstate density than the a-like OS and the amorphous oxide semiconductor.Note that no regularity of crystal orientation is observed betweendifferent pellets in the nc-OS. Therefore, the nc-OS has a higher defectstate density than the CAAC-OS.

<a-like OS>

An a-like OS is an oxide semiconductor with a structure intermediatebetween that of the nc-OS and that of the amorphous oxide semiconductor.

In a high-resolution TEM image of the a-like OS, a void space may beobserved. Furthermore, the high-resolution TEM image includes a regionin which a crystal part can be clearly recognized and a region in whicha crystal part cannot be recognized.

The a-like OS has an unstable structure because it contains a voidspace. To verify that the a-like OS has an unstable structure ascompared with the CAAC-OS and the nc-OS, a structure change caused byelectron irradiation will be described below.

An a-like OS (denoted by Sample A), an nc-OS (denoted by Sample B), anda CAAC-OS (denoted by Sample C) are prepared as samples subjected toelectron irradiation. Each of the samples is an In—Ga—Zn oxide.

First, a high-resolution cross-sectional TEM image of each sample isobtained. The high-resolution cross-sectional TEM images show that allthe samples have crystal parts.

Note that which part is regarded as one crystal part may be determinedas follows. For example, it is known that a unit cell of the InGaZnO₄crystal has a structure in which three In—O layers and six Ga—Zn—Olayers, nine layers in total, are stacked in a layered manner in thec-axis direction. The distance between the adjacent layers is equivalentto the lattice spacing (also referred to as d value) on the (009) plane.The value is calculated to be 0.29 nm from crystal structure analysis.Accordingly, a portion in which the distance between lattice fringes isgreater than or equal to 0.28 nm and less than or equal to 0.30 nm canbe regarded as a crystal part of InGaZnO₄. Note that the lattice fringecorresponds to the a-b plane of the InGaZnO₄ crystal.

FIG. 42 exemplifies the researched average size of crystal parts(average crystal size) (at 22 points to 45 points) in each sample. Notethat the size of the crystal part corresponds to the length of theabove-described lattice fringe. FIG. 42 indicates that the crystal partin the a-like OS becomes larger with an increase in cumulative dose ofelectrons (cumulative electron dose). Specifically, as shown by (1) inFIG. 42, a crystal part of approximately 1.2 nm (also referred to as aninitial nucleus) at the beginning of TEM observation grows to a size ofapproximately 2.6 nm at a cumulative dose of 4.2×10⁸ e⁻/nm². Incontrast, the size of the crystal part in the nc-OS and the CAAC-OSshows little change from the start of electron irradiation to acumulative dose of electrons of 4.2×10⁸ e⁻/nm². Specifically, as shownby (2) and (3) in FIG. 42, the size of the crystal part in the nc-OS andthat in the CAAC-OS are approximately 1.4 nm and approximately 2.1 nm,respectively, regardless of the cumulative dose of electrons.

In the a-like OS, such growth of the crystal part due to electronirradiation is observed in some cases. In contrast, in the nc-OS and theCAAC-OS, growth of the crystal part due to electron irradiation is foundto be hardly observable. That is, the a-like OS is found to have anunstable structure as compared with the nc-OS and the CAAC-OS.

Furthermore, since containing a void space, the a-like OS has astructure with a lower density than that of the nc-OS and that of theCAAC-OS. Specifically, the density of the a-like OS is greater than orequal to 78.6% and less than 92.3% of the density of a single crystalhaving the same composition. In addition, the density of the nc-OS andthe density of the CAAC-OS are each greater than or equal to 92.3% andless than 100% of the density of the single crystal having the samecomposition. The deposition itself of an oxide semiconductor having adensity less than 78% of the density of the single crystal is difficult.

For example, regarding an oxide semiconductor in which In:Ga:Zn=1:1:1[atomic ratio] is satisfied, the density of single crystal InGaZnO₄ witha rhombohedral crystal structure is 6.357 g/cm³. Accordingly, regardingthe oxide semiconductor in which In:Ga:Zn=1:1:1 [atomic ratio] issatisfied, for example, the density of the a-like OS is higher than orequal to 5.0 g/cm³ and lower than 5.9 g/cm³. Furthermore, regarding theoxide semiconductor in which In:Ga:Zn=1:1:1 [atomic ratio] is satisfied,for example, the density of the nc-OS and the density of the CAAC-OS areeach higher than or equal to 5.9 g/cm³ and lower than 6.3 g/cm³.

Note that a single crystal with the same composition does not exist insome cases. In that case, single crystals with different compositionsare combined in an adequate ratio, which makes it possible to estimate adensity equivalent to that of a single crystal with a desiredcomposition. The density equivalent to that of the single crystal withthe desired composition may be estimated using a weighted average withrespect to the combination ratio of the single crystals with differentcompositions. Note that it is preferable to combine as few kinds ofsingle crystals as possible for density estimation.

As described above, oxide semiconductors have various structures andvarious properties. Note that an oxide semiconductor may be a stack offilms including two or more kinds of an amorphous oxide semiconductor,an a-like OS, an nc-OS, and a CAAC-OS, for example.

In addition, as an example of an oxide semiconductor that can be usedfor the semiconductor layer 242 a, the semiconductor layer 242 b, and asemiconductor layer 108 c, an oxide containing indium can be given. Anoxide containing indium has high carrier mobility (electron mobility),for example. Furthermore, the oxide semiconductor preferably contains anelement M The element M is preferably aluminum, gallium, yttrium, tin,or the like. Other elements which can be used as the element M areboron, silicon, titanium, iron, nickel, germanium, zirconium,molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten,magnesium, and the like. Note that the element M may be a combination oftwo or more of the above elements. The element M is an element having ahigh bonding energy with oxygen, for example. The element M is anelement having a function of increasing the energy gap of the oxide, forexample. Furthermore, the oxide semiconductor preferably contains zinc.When an oxide contains zinc, for example, the oxide is easilycrystallized.

Note that the oxide semiconductor is not limited to the oxide containingindium. The oxide semiconductor may be, for example, zinc tin oxide,gallium tin oxide, or gallium oxide.

In addition, an oxide with a large energy gap is used as the oxidesemiconductor. For example, the energy gap of the oxide semiconductor isgreater than or equal to 2.5 eV and less than or equal to 4.2 eV,preferably greater than or equal to 2.8 eV and less than or equal to 3.8eV, further preferably greater than or equal to 3 eV and less than orequal to 3.5 eV.

An influence of impurities in the oxide semiconductor will be describedbelow. Note that for stabilization of the electrical characteristics ofthe transistor, it is effective to reduce the impurity concentration inthe oxide semiconductor to achieve low carrier density and highpurification. To reduce the impurity concentration in the oxidesemiconductor, the impurity concentration in an adjacent film is alsopreferably reduced.

For example, silicon in the oxide semiconductor might serve as a carriertrap or a carrier generation source. Therefore, the siliconconcentration in the oxide semiconductor, which is measured by secondaryion mass spectrometry (SIMS), is lower than 1×10¹⁹ atoms/cm³, preferablylower than 5×10¹⁸ atoms/cm³, further preferably lower than 2×10¹⁸atoms/cm³.

Furthermore, when hydrogen is contained in the oxide semiconductor, thecarrier density might be increased. The hydrogen concentration in theoxide semiconductor, which is measured by SIMS, is lower than or equalto 2×10²⁰ atoms/cm³, preferably lower than or equal to 5×10¹⁹ atoms/cm³,further preferably lower than or equal to 1×10¹⁹ atoms/cm³, stillfurther preferably lower than or equal to 5×10¹⁸ atoms/cm³. Furthermore,when nitrogen is contained in the oxide semiconductor, the carrierdensity might be increased. The nitrogen concentration in the oxidesemiconductor, which is measured by SIMS, is lower than 5×10¹⁹atoms/cm³, preferably lower than or equal to 5×10¹⁸ atoms/cm³, furtherpreferably lower than or equal to 1×10¹⁸ atoms/cm³, still furtherpreferably lower than or equal to 5×10¹⁷ atoms/cm³.

Furthermore, to reduce the hydrogen concentration in the oxidesemiconductor, the hydrogen concentrations in the insulating layer 409and the insulating layer 117 which are in contact with the semiconductorlayer 242 are preferably reduced. The hydrogen concentrations in theinsulating layer 409 and the insulating layer 117, which are measured bySIMS, are each lower than or equal to 2×10²⁰ atoms/cm³, preferably lowerthan or equal to 5×10¹⁹ atoms/cm³, further preferably lower than orequal to 1×10¹⁹ atoms/cm³, still further preferably lower than or equalto 5×0¹⁸ atoms/cm³. Furthermore, to reduce the nitrogen concentration inthe oxide semiconductor, the nitrogen concentrations in the insulatinglayer 409 and the insulating layer 117 are preferably reduced. Thenitrogen concentrations in the insulating layer 409 and the insulatinglayer 117, which are measured by SIMS, are each lower than 5×10¹⁹atoms/cm³, preferably lower than or equal to 5×10¹⁸ atoms/cm³, furtherpreferably lower than or equal to 1×10¹⁸ atoms/cm³, still furtherpreferably lower than or equal to 5×10¹⁷ atoms/cm³.

In this embodiment, first, the semiconductor layer 242 a is formed overthe insulating layer 409, and the semiconductor layer 242 b is formedover the semiconductor layer 242 a.

Note that the oxide semiconductor layer is preferably deposited by asputtering method. As a sputtering method, an RF sputtering method, a DCsputtering method, an AC sputtering method, or the like can be used. ADC sputtering method or an AC sputtering method can achieve uniformdeposition as compared with an RF sputtering method.

In this embodiment, as the semiconductor layer 242 a, a 20-nm-thickIn—Ga—Zn oxide is formed by a sputtering method using an In—Ga—Zn oxidetarget (In:Ga:Zn=1:3:2). Note that without being limited thereto, otherconstituent elements and compositions are applicable to thesemiconductor layer 242 a.

Furthermore, oxygen doping treatment may be performed after theformation of the semiconductor layer 242 a.

Next, the semiconductor layer 242 b is formed over the semiconductorlayer 242 a. In this embodiment, as the semiconductor layer 242 b, a30-nm-thick In—Ga—Zn oxide is formed by a sputtering method using anIn—Ga—Zn oxide target (In:Ga:Zn=1:1:1). Note that without being limitedthereto, other constituent elements and compositions are applicable tothe semiconductor layer 242 b.

Furthermore, oxygen doping treatment may be performed after theformation of the semiconductor layer 242 b.

Next, heat treatment may be performed to further reduce impurities suchas moisture or hydrogen contained in the semiconductor layer 242 a andthe semiconductor layer 242 b, so that the semiconductor layer 242 a andthe semiconductor layer 242 b are highly purified.

For example, the semiconductor layer 242 a and the semiconductor layer242 b are subjected to heat treatment in a reduced-pressure atmosphere,an inert atmosphere of nitrogen, a rare gas, or the like, an oxidationatmosphere, or an ultra-dry air (an air with a moisture content of 20ppm (in a dew point equivalent to −55° C.) or less, preferably 1 ppm orless, preferably 10 ppb or less, in the case where the measurement isperformed with a dew point meter in a CRDS (cavity ring down laserspectroscopy) system). Note that the oxidation atmosphere refers to anatmosphere containing 10 ppm or more oxidation gas such as oxygen,ozone, or nitrogen oxide. Furthermore, the inert atmosphere refers to anatmosphere containing the above oxidation gas at less than 10 ppm and isfilled with nitrogen or a rare gas.

Moreover, by the heat treatment, oxygen contained in the insulatinglayer 409 can be diffused into the semiconductor layer 242 a and thesemiconductor layer 242 b concurrently with the release of impurities,so that oxygen vacancies in the semiconductor layer 242 a and thesemiconductor layer 242 b can be reduced. Note that heat treatment in aninert gas atmosphere may be followed by heat treatment in an atmospherecontaining 10 ppm or more, 1% or more, or 10% or more oxidation gas.Note that the heat treatment may be performed at any time after thesemiconductor layer 242 b is formed. For example, the heat treatment maybe performed after the semiconductor layer 242 b is selectively etched.

The heat treatment may be performed at higher than or equal to 250° C.and lower than or equal to 650° C., preferably higher than or equal to300° C. and lower than or equal to 500° C. The treatment time is shorterthan or equal to 24 hours. Heat treatment for over 24 hours is notpreferable because the productivity is reduced.

Next, a resist mask is formed over the semiconductor layer 242 b, andwith the use of the resist mask, part of the semiconductor layer 242 aand part of the semiconductor layer 242 b are selectively etched. Atthis time, the insulating layer 409 might be partly etched, so that theinsulating layer 409 might have a projection.

A dry etching method and/or a wet etching method may be used for theetching of the semiconductor layer 242 a and the semiconductor layer 242b. After the etching, the resist mask is removed.

Furthermore, in the transistor 602, the electrode 244 and the electrode245 which are partly in contact with the semiconductor layer 242 b areprovided over the semiconductor layer 242 b. The electrode 244 and theelectrode 245 (including another electrode or wiring that is formed inthe same layer as they) can be formed using a material and a methodsimilar to those of the wiring 421.

In addition, the transistor 602 includes the semiconductor layer 242 cover the semiconductor layer 242 b, the electrode 244, and the electrode245. The semiconductor layer 242 c is partly in contact with thesemiconductor layer 242 b, the electrode 244, and the electrode 245.

In this embodiment, the semiconductor layer 242 c is formed by asputtering method using an In—Ga—Zn oxide target (In:Ga:Zn=1:3:2). Notethat without being limited thereto, other constituent elements andcompositions are applicable to the semiconductor layer 242 c. Forexample, gallium oxide may be used for the semiconductor layer 242 c.Furthermore, oxygen doping treatment may be performed on thesemiconductor layer 242 c.

Furthermore, the transistor 602 includes the insulating layer 117 overthe semiconductor layer 242 c. The insulating layer 117 can function asa gate insulating layer. The insulating layer 117 can be formed using amaterial and a method similar to those of the insulating layer 409.Furthermore, oxygen doping treatment may be performed on the insulatinglayer 117.

After the semiconductor layer 242 c and the insulating layer 117 areformed, a mask may be formed over the insulating layer 117, and part ofthe semiconductor layer 242 c and part of the insulating layer 117 maybe selectively etched, whereby the island-shaped semiconductor layer 242c and the island-shaped insulating layer 117 are obtained.

Furthermore, the transistor 602 includes the electrode 243 over theinsulating layer 117. The electrode 243 (including another electrode orwiring that is formed in the same layer as it) can be formed using amaterial and a method similar to those of the wiring 421.

In this embodiment, an example in which the electrode 243 is a stack ofan electrode 243 a and an electrode 243 b is shown. For example, theelectrode 243 a is formed using tantalum nitride, and the electrode 243b is formed using copper. The electrode 243 a functions as a barrierlayer to prevent copper diffusion. Thus, a semiconductor device withhigh reliability can be provided.

Furthermore, the transistor 602 includes an insulating layer 418 whichcovers the electrode 243. The insulating layer 418 can be formed using amaterial and a method similar to those of the insulating layer 409.Furthermore, oxygen doping treatment may be performed on the insulatinglayer 418. In addition, a surface of the insulating layer 418 may besubjected to CMP treatment.

In addition, an insulating layer 439 is provided over the insulatinglayer 418, and an insulating layer 419 is provided over the insulatinglayer 439. The insulating layer 439 and the insulating layer 419 caneach be formed using a material and a method similar to those of theinsulating layer 405. In addition, a surface of the insulating layer 419may be subjected to CMP treatment. The CMP treatment can reduceunevenness of a surface of a material and improve coverage with aninsulating layer or a conductive layer formed later. In addition,openings are formed in part of the insulating layer 419, part of theinsulating layer 439, and part of the insulating layer 418. Furthermore,contact plugs are formed in the openings.

Furthermore, a wiring 427 and a wiring 444 (including another electrodeor wiring that is formed in the same layer as they) are formed over theinsulating layer 419. The wiring 444 is electrically connected to theelectrode 273 via the contact plug in the opening provided in theinsulating layer 419 and the insulating layer 418. Similarly, the wiring427 is electrically connected to the electrode 243 via the contact plugin the opening provided in the insulating layer 419 and the insulatinglayer 418.

The imaging device 115 further includes an insulating layer 415 whichcovers the wiring 427 and the wiring 444 (including another electrode orwiring that is formed in the same layer as they). The insulating layer415 can be formed using a material and a method similar to those of theinsulating layer 405. In addition, a surface of the insulating layer 415may be subjected to CMP treatment. The CMP treatment can reduceunevenness of a surface of a material and improve coverage with aninsulating layer or a conductive layer formed later. In addition, anopening is formed in part of the insulating layer 415.

Furthermore, a wiring 422, a wiring 423, and the wiring 266 (includinganother electrode or wiring that is formed in the same layer as they)are formed over the insulating layer 415.

Note that the wiring 422, the wiring 423, and the wiring 266 (includinganother electrode or wiring that is formed in the same layer as they)can each be electrically connected to a wiring in another layer or anelectrode in another layer via a contact plug in an opening formed inthe insulating layer.

Furthermore, an insulating layer 416 is provided to cover the wiring422, the wiring 423, and the wiring 266. The insulating layer 416 can beformed using a material and a method similar to those of the insulatinglayer 405. In addition, a surface of the insulating layer 416 may besubjected to CMP treatment.

[Transistor 281, transistor 282]

FIG. 25(A) is an enlarged cross-sectional view of the transistor 281illustrated in FIG. 22 as an example of a transistor included in aperipheral circuit. Furthermore, FIG. 25(B) is an enlargedcross-sectional view of the transistor 282 illustrated in FIG. 22. Inthis embodiment, the case where the transistor 281 is a p-channeltransistor and the transistor 282 is an n-channel transistor will bedescribed as an example.

The transistor 281 includes a channel formation region 283,high-concentration p-type impurity regions 285, an insulating layer 286,an electrode 287, and a sidewall 288. Furthermore, low-concentrationp-type impurity regions 284 are provided in regions overlapping with thesidewall 288 with the insulating layer 286 positioned therebetween. Theinsulating layer 286 can function as a gate insulating layer. Theelectrode 287 can function as a gate electrode.

The low-concentration p-type impurity regions 284 can be formed in sucha manner that an impurity element is introduced with the use of theelectrode 287 as a mask after the formation of the electrode 287 andbefore the formation of the sidewall 288. In other words, thelow-concentration p-type impurity regions 284 can be formed in aself-aligned manner. After the sidewall 288 is formed, thehigh-concentration p-type impurity regions 285 are formed. Furthermore,the high-concentration p-type impurity regions 285 can be formedconcurrently in the same process as the p-type semiconductor 221included in the photoelectric conversion element 601. Note that thelow-concentration p-type impurity regions 284 have the same conductivitytype as the high-concentration p-type impurity regions 285 and have alower concentration of the impurity imparting the conductivity type thanthe high-concentration p-type impurity regions 285. Furthermore, thelow-concentration p-type impurity regions 284 are not necessarilyprovided depending on circumstances.

In the transistor 282, a channel formation region 1283 is formed in thewell 220. Furthermore, the transistor 282 includes the channel formationregion 1283, high-concentration n-type impurity regions 1285, theinsulating layer 286, the electrode 287, and the sidewall 288.Furthermore, low-concentration n-type impurity regions 1284 are providedin regions overlapping with the sidewall 288 with the insulating layer286 positioned therebetween.

The low-concentration n-type impurity regions 1284 can be formed in sucha manner that an impurity element is introduced with the use of theelectrode 287 as a mask after the formation of the electrode 287 andbefore the formation of the sidewall 288. In other words, thelow-concentration n-type impurity regions 1284 can be formed in aself-aligned manner. After the sidewall 288 is formed, thehigh-concentration n-type impurity regions 1285 are formed. Note thatthe low-concentration n-type impurity regions 1284 have the sameconductivity type as the high-concentration n-type impurity regions 1285and have a lower concentration of the impurity imparting theconductivity type than the high-concentration n-type impurity regions1285. Furthermore, the low-concentration n-type impurity regions 1284are not necessarily provided depending on circumstances.

The transistor 281 and the transistor 282 are electrically isolated fromeach other by an element isolation layer 414. The element isolationregion can be formed by a LOCOS (Local

Oxidation of Silicon) method, an STI (Shallow Trench Isolation) method,or the like.

MODIFICATION EXAMPLE 1

FIG. 26 illustrates a structure example of an imaging device which isdifferent from the one in FIG. 22. As illustrated in FIG. 26, astructure without the n-channel transistor 282 may also be employed. ACMOS circuit needed for the peripheral circuit can be obtained bycombining the n-channel transistor 289 with the p-channel transistor281. Since the n-channel transistor 282 is not provided, manufacturingsteps of the imaging device 115 can be reduced. Accordingly, an imagingdevice with favorable producibility can be provided. Moreover, animaging device can be manufactured at a lower cost.

MODIFICATION EXAMPLE 2

FIG. 27 illustrates a structure example of an imaging device which isdifferent from the ones in FIG. 22 and FIG. 26. In each of thetransistors 602 and 289 illustrated in FIG. 27, an electrode 213functioning as a back gate is provided in a region overlapping with thesemiconductor layer 242 with the insulating layer 409 positionedtherebetween. In addition, the electrode 273 included in the capacitor606 is provided in a region overlapping with the electrode 245 with theinsulating layer 409 positioned therebetween.

In the case where the electrode 213 functioning as a back gate isprovided in each of the transistors 602 and 289, the electrode 273 canbe formed using part of a conductive layer for forming the electrode213. The electrode 213 and the electrode 273 can be concurrently formedover the same layer with the use of the same manufacturing method andmaterial. That is, the electrode 213 and the electrode 273 are layerswhich have processed into the island shapes through the same depositionstep and the same etching step.

In addition, the electrode 213 and the electrode 273 can be formed usinga material and a method similar to those of the electrode 243. Note thatin the case where the capacitor 606 has a light-transmitting property, aconductive material having a light-transmitting property is preferablyused for the electrode 245 and the electrode 273. When the capacitor 606has a light-transmitting property, the effective aperture ratio can beincreased. Moreover, there is no need to separately perform a step forforming the electrode 273; thus, the producibility of the imaging devicecan be increased.

Note that the variety of films such as the metal film, the semiconductorfilm, and the inorganic insulating film which are disclosed in thisspecification and the like can be formed by a sputtering method or aplasma CVD method; however, they may be formed by another method, forexample, a thermal CVD (Chemical Vapor Deposition) method. For example,an MOCVD (Metal Organic Chemical Vapor Deposition) method or an ALD(Atomic Layer Deposition) method may be employed as a thermal CVDmethod.

A thermal CVD method, which is a deposition method using no plasma, hasan advantage that no defect due to plasma damage is generated.

Deposition by a thermal CVD method may be performed in such a mannerthat a source gas and an oxidizer are supplied at the same time to achamber under an atmospheric pressure or a reduced pressure and reactwith each other in the vicinity of a substrate or over the substrate tobe deposited over the substrate.

Furthermore, deposition by an ALD method may be performed in such amanner that the pressure in a chamber is set to an atmospheric pressureor a reduced pressure, source gases for reaction are sequentiallyintroduced into the chamber, and the gas introduction sequence isrepeated. For example, two or more kinds of source gases are supplied inturn to the chamber by switching respective switching valves (alsoreferred to as high-speed valves). To prevent mixture of the pluralityof source gases, an inert gas (e.g., argon or nitrogen) or the like isintroduced at the same time as or after a first source gas, and then, asecond source gas is introduced. Note that in the case where the inertgas is introduced at the same time, the inert gas serves as a carriergas; the inert gas may also be introduced at the same time as the secondsource gas. Alternatively, instead of the introduction of the inert gas,the first source gas may be exhausted by vacuum evacuation, and then,the second source gas may be introduced. The first source gas isadsorbed on a surface of the substrate and deposited as a first layer,and then, the second source gas is introduced and reacts with it to forma second layer stacked over the first layer; thus, a thin film isformed. This gas introduction sequence is repeated a plurality of timesuntil a desired thickness is obtained, whereby a thin film withexcellent step coverage can be formed. The thickness of the thin filmcan be controlled by the number of times of repetition of the gasintroduction sequence; therefore, the film thickness can be preciselycontrolled, which is suitable for manufacture of a minute FET (FieldEffect Transistor).

The variety of films such as the metal film, the semiconductor film, andthe inorganic insulating film which are disclosed in the above-describedembodiments can be formed by a thermal CVD method such as an MOCVDmethod or an ALD method. For example, in the case where an In—Ga—Zn—Ofilm is deposited, trimethylindium (In(CH₃)₃), trimethylgallium(Ga(CH₃)₃), and dimethylzinc (Zn(CH₃)₂) are used. Furthermore, withoutlimitation to this combination, triethylgallium (Ga(C₂H₅)₃) can be usedinstead of trimethylgallium, and diethylzinc (Zn(C₂H₅)₂) can be usedinstead of dimethylzinc.

For example, in the case where a hafnium oxide film is formed with adeposition apparatus employing ALD, two kinds of gases, i.e., ozone (O₃)as an oxidizer and a source gas which is obtained by vaporizing a liquidcontaining a solvent and a hafnium precursor compound (hafnium alkoxideor hafnium amide such as tetrakis(dimethylamide)hafnium (TDMAH,Hf[N(CH₃)₂]₄)) are used. Another example of the material istetrakis(ethylmethylamide)hafnium.

For example, in the case where an aluminum oxide film is formed with adeposition apparatus employing ALD, two kinds of gases, i.e., H₂O as anoxidizer and a source gas which is obtained by vaporizing a liquidcontaining a solvent and an aluminum precursor compound (e.g.,trimethylaluminum (TMA, Al(CH₃)₃)) are used. Other examples of thematerial include tris(dimethylamide)aluminum, triisobutylaluminum, andaluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

For example, in the case where a silicon oxide film is formed with adeposition apparatus employing ALD, hexachlorodisilane is adsorbed on asurface on which a film is to be deposited, chlorine contained in theadsorbate is removed, and radicals of an oxidation gas (O₂ or dinitrogenmonoxide) are supplied to react with the adsorbate.

For example, in the case where a tungsten film is deposited with adeposition apparatus employing ALD, a WF₆ gas and a B₂H₆ gas arealternately introduced to form an initial tungsten film, and then, a WF₆gas and an H₂ gas are alternately introduced, so that a tungsten film isformed. Note that an SiH₄ gas may be used instead of a B₂H₆ gas.

For example, in the case where an oxide semiconductor film, e.g., anIn—Ga—Zn—O film is deposited with a deposition apparatus employing ALD,an In(CH₃)₃ gas and an O₃ gas are alternately introduced to form an In—Olayer, then, a Ga(CH₃)₃ gas and an O₃ gas are alternately introduced toform a GaO layer, and then, a Zn(CH₃)2 gas and an O₃ gas are alternatelyintroduced to form a ZnO layer. Note that the order of these layers isnot limited to this example. A mixed oxide layer such as an In—Ga—Olayer, an In—Zn—O layer, or a Ga—Zn—O layer may be formed using thesegases. Note that although an H₂O gas which is obtained by bubbling waterwith an inert gas such as Ar may be used instead of an O₃ gas, it ispreferable to use an O₃ gas, which does not contain H. Furthermore,instead of an In(CH₃)₃ gas, an In(C₂H₅)₃ gas may be used. Similarly,instead of a Ga(CH₃)₃ gas, a Ga(C₂H₅)₃ gas may be used.

MODIFICATION EXAMPLE 3

FIG. 28 illustrates a structure example of the imaging device 115 whichis different from the ones in FIG. 22, FIG. 26, and FIG. 27.

In the imaging device 115 illustrated in FIG. 28, the photoelectricconversion element 601 is provided over the insulating layer 415. Thephotoelectric conversion element 601 illustrated in FIG. 28 includes aphotoelectric conversion layer 681 between an electrode 686 formed usinga metal material or the like and a light-transmitting conductive layer682. FIG. 28 illustrates an embodiment in which a selenium-basedmaterial is used for the photoelectric conversion layer 681. Thephotoelectric conversion element 601 in which the selenium-basedmaterial is used has characteristics with high external quantumefficiency with respect to visible light. This photoelectric conversionelement enables a highly sensitive sensor in which the electronicamplification with respect to the amount of incident light is high owingto an avalanche phenomenon. Moreover, the selenium-based material, whichhas a high light-absorption coefficient, has an advantage that thethickness of the photoelectric conversion layer 681 can be easilyreduced.

Amorphous selenium or crystalline selenium can be used as theselenium-based material. Crystalline selenium can be obtained by, forexample, depositing amorphous selenium and then performing heattreatment. Note that when the crystal grain size of crystalline seleniumis smaller than a pixel pitch, variation in characteristics betweenpixels can be reduced. Moreover, crystalline selenium hascharacteristics with higher spectral sensitivity and a higher lightabsorption coefficient with respect to visible light than amorphousselenium.

Note that the photoelectric conversion layer 681 is illustrated as asingle layer; however, it is also possible to employ a structure inwhich gallium oxide, cerium oxide, or the like is provided as a holeinjection blocking layer on the light-receiving surface side of theselenium-based material and nickel oxide, antimony sulfide, or the likeis provided as an electron injection blocking layer on the electrode 686side.

Furthermore, the photoelectric conversion layer 681 may be a layerincluding a compound of copper, indium, and selenium (CIS).Alternatively, it may be a layer including a compound of copper, indium,gallium, and selenium (CIGS). With CIS or CIGS, a photoelectricconversion element that can utilize an avalanche phenomenon as in thecase of a single-layer selenium can be formed.

Furthermore, an n-type semiconductor such as cadmium sulfide or zincsulfide may be provided in contact with CIS or CIGS, which are p-typesemiconductors, in order to form a junction.

It is preferable to apply a relatively high voltage (e.g., 10 V orhigher) to the photoelectric conversion element in order to cause anavalanche phenomenon. Since the OS transistor has characteristics with ahigher drain withstand voltage than a Si transistor, the application ofa relatively high voltage to the photoelectric conversion element iseasy. Thus, by combination of the OS transistor having a high drainwithstand voltage and the photoelectric conversion element in which theselenium-based material is used for the photoelectric conversion layer,a highly sensitive and highly reliable imaging device can be obtained.

For the light-transmitting conductive layer 682, for example, indium tinoxide, indium tin oxide containing silicon, indium oxide containingzinc, zinc oxide, zinc oxide containing gallium, zinc oxide containingaluminum, tin oxide, tin oxide containing fluorine, tin oxide containingantimony, or graphene can be used. In addition, the light-transmittingconductive layer 682 is not limited to a single layer and may be a stackof different films.

Note that in the structure in FIG. 28, the photoelectric conversionlayer 681 and the light-transmitting conductive layer 682 are notdivided for each pixel; however, they may be divided for each pixel asillustrated in FIG. 29(A). Furthermore, in a region which is betweenadjacent pixels and does not include the electrode 686, a partition wall477 formed of an insulator is preferably provided to prevent a crack inthe photoelectric conversion layer 681 and the light-transmittingconductive layer 682. As illustrated in FIG. 29(B), however, a structurewithout the partition wall 477 may also be employed. In addition, in thestructure illustrated in FIG. 28, the light-transmitting conductivelayer 682 and a wiring 487 are electrically connected to each otherthrough a wiring 488 and a contact plug 489; however, as illustrated inFIG. 29(C) and FIG. 29(D), the light-transmitting conductive layer 682and the wiring 487 may be in direct contact with each other.

Furthermore, the electrode 686, the wiring 487, and the like may eachhave a structure in which a plurality of conductive layers is stacked.For example, as illustrated in FIG. 29(E), the electrode 686 can includetwo layers, i.e., a conductive layer 686 a and a conductive layer 686 b,and the wiring 487 can include two layers, i.e., a conductive layer 487a and a conductive layer 487 b. In the structure in FIG. 29(E), forexample, a low-resistance metal or the like is preferably selected toform the conductive layer 686 a and the conductive layer 487 a, and ametal or the like that exhibits an excellent contact property with thephotoelectric conversion layer 681 is preferably selected to form theconductive layer 686 b and the conductive layer 487 b. Such a structurecan improve the electrical characteristics of the photoelectricconversion element. In addition, some kinds of metal may causeelectrochemical corrosion by being in contact with thelight-transmitting conductive layer 682. Even in the case where such ametal is used for the conductive layer 487 a, the conductive layer 487 bcan prevent electrochemical corrosion.

For the conductive layer 686 b and the conductive layer 487 b, forexample, molybdenum or tungsten can be used. Furthermore, for theconductive layer 686 a and the conductive layer 487 a, for example,aluminum, titanium, or a titanium-aluminum-titanium stack can be used.

Furthermore, an insulating layer 442 may have a multi-layer structure.The partition wall 477 can be formed using an inorganic insulator, aninsulating organic resin, or the like. In addition, the partition wall477 may be colored black or the like in order to shield the transistorsand the like from light and/or to determine the area of alight-receiving portion in each pixel.

Note that FIG. 28 illustrates an example of an embodiment in which thetransistor 289 and the transistor 602 each include a back gate; however,an embodiment without a back gate may also be employed. In analternative embodiment, at least one transistor, for example, only thetransistor 289 may include a back gate. The back gate may beelectrically connected to a gate provided on the opposite side.Alternatively, different fixed potentials may be supplied to the backgate and the gate. Note that the description of the presence or absenceof the back gate can also apply to the other embodiments of the imagingdevice described in this embodiment.

Alternatively, a PIN diode element or the like in which an amorphoussilicon film, a microcrystalline silicon film, or the like is used maybe used as the photoelectric conversion element 601. The photodiode hasa structure in which an n-type semiconductor layer, an i-typesemiconductor layer, and a p-type semiconductor layer are sequentiallystacked. Amorphous silicon is preferably used for the i-typesemiconductor layer. Furthermore, amorphous silicon, microcrystallinesilicon, or the like which includes dopants imparting the respectiveconductivity types can be used for the p-type semiconductor layer andthe n-type semiconductor layer. A photodiode in which amorphous siliconis used for a photoelectric conversion layer has high sensitivity in avisible light wavelength region and therefore can easily detect weakvisible light.

Note that a PN or PIN diode element is preferably provided such that thep-type semiconductor layer serves as a light-receiving surface. When thep-type semiconductor layer serves as a light-receiving surface, theoutput current of the photoelectric conversion element 601 can beincreased.

The above-described photoelectric conversion element 601 formed using aselenium-based material, amorphous silicon, or the like can be formed ina general semiconductor manufacturing process including a depositionstep, a lithography step, an etching step, and the like. In addition,since the resistance of the selenium-based material is high, thestructure illustrated in FIG. 28 can also be employed, in which thephotoelectric conversion layer 681 is not divided between pixels.

Furthermore, as illustrated in FIG. 30(A1) and FIG. 30(B1), the imagingdevice may be bent. FIG. 30(A1) illustrates a state in which the imagingdevice is bent in the direction of dashed-two dotted line X1-X2. FIG.30(A2) is a cross-sectional view of a portion indicated by dashed-twodotted line X1-X2 in FIG. 30(A1). FIG. 30(A3) is a cross-sectional viewof a portion indicated by dashed-two dotted line Y1-Y2 in FIG. 30(A1).

FIG. 30(B1) illustrates a state in which the imaging device is bent inthe direction of dashed-two dotted line X3-X4 in the same drawing andbent in the direction of dashed-two dotted line Y3-Y4 in the samedrawing. FIG. 30(B2) is a cross-sectional view of a portion indicated bydashed-two dotted line X3-X4 in FIG. 30(B1). FIG. 30(B3) is across-sectional view of a portion indicated by dashed-two dotted lineY3-Y4 in FIG. 30(B1).

The bent imaging device enables field curvature and astigmatism to bereduced. Thus, the optical design of lens or the like which is used incombination with the imaging device can be facilitated. For example, thenumber of lenses for aberration correction can be reduced; accordingly,the size or the weight of a semiconductor device or the like in whichthe imaging device is used can be easily reduced. In addition, thequality of a captured image can be improved.

This embodiment can be implemented in an appropriate combination withany of the structures described in the other embodiments.

Embodiment 4

In this embodiment, structure examples of transistors that can be usedas the transistors shown in the above embodiments will be described withreference to drawings.

[Bottom-Gate Transistor]

A transistor 410 illustrated as an example in FIG. 31(A1) is achannel-protective transistor that is a kind of bottom-gate transistor.The transistor 410 includes an electrode 246 that can function as a gateelectrode over the insulating layer 409. Furthermore, the semiconductorlayer 242 is provided over the electrode 246 with an insulating layer216 positioned therebetween. The electrode 246 can be formed using amaterial and a method similar to those of the electrode 243. Theinsulating layer 216 can be formed using a material and a method similarto those of the insulating layer 117.

The transistor 410 further includes an insulating layer 209 that canfunction as a channel protective layer over a channel formation regionof the semiconductor layer 242. The insulating layer 209 can be formedusing a material and a method similar to those of the insulating layer216.

Furthermore, the electrode 244 and the electrode 245 are provided overthe insulating layer 216 so as to be partly in contact with thesemiconductor layer 242. Part of the electrode 244 and part of theelectrode 245 are formed over the insulating layer 209.

With the insulating layer 209 provided over the channel formationregion, the semiconductor layer 242 can be prevented from being exposedat the time of forming the electrode 244 and the electrode 245. Thus,the channel formation region of the semiconductor layer 242 can beprevented from being etched at the time of forming the electrode 244 andthe electrode 245. According to one embodiment of the present invention,a transistor with favorable electrical characteristics can be provided.

Furthermore, the transistor 410 includes the insulating layer 418 overthe electrode 244, the electrode 245, and the insulating layer 209 andincludes the insulating layer 439 over the insulating layer 418.

A transistor 411 illustrated in FIG. 31(A2) is different from thetransistor 410 in that the electrode 213 that can function as a backgate electrode is provided over the insulating layer 439. The electrode213 can be formed using a material and a method similar to those of theelectrode 243.

In general, a back gate electrode is formed using a conductive layer andpositioned such that a channel formation region of a semiconductor layeris interposed between a gate electrode and the back gate electrode.Thus, the back gate electrode can function in a manner similar to thatof the gate electrode. The potential of the back gate electrode may beequal to that of the gate electrode or may be a ground potential, agiven potential, or the like. Furthermore, by changing the potential ofthe back gate electrode independently of that of the gate electrode, thethreshold voltage of the transistor can be controlled.

The electrode 246 and the electrode 213 can each function as a gateelectrode. Thus, the insulating layer 216, the insulating layer 209, theinsulating layer 418, and the insulating layer 439 can each function asa gate insulating layer.

Note that in the case where one of the electrodes 246 and 213 isreferred to as “gate electrode”, the other may be referred to as “backgate electrode”. For example, in the transistor 411, in the case wherethe electrode 213 is referred to as “gate electrode”, the electrode 246is referred to as “back gate electrode”. Furthermore, in the case wherethe electrode 213 is used as “gate electrode”, the transistor 411 can beregarded as a kind of top-gate transistor.

By providing the electrode 246 and the electrode 213 with thesemiconductor layer 242 positioned therebetween, and furthermore, bysetting the potentials of the electrode 246 and the electrode 213 to thesame value, a region of the semiconductor layer 242 through whichcarriers flow is enlarged in the film thickness direction; thus, thenumber of transferred carriers is increased. As a result, the on-statecurrent and the field-effect mobility of the transistor 411 areincreased.

Thus, the transistor 411 is a transistor that has a high on-statecurrent for the area it occupies. That is, the area occupied by thetransistor 411 can be small for a required on-state current. Accordingto one embodiment of the present invention, the area occupied by atransistor can be reduced. Therefore, according to one embodiment of thepresent invention, a semiconductor device having a high degree ofintegration can be provided.

Furthermore, the gate electrode and the back gate electrode are formedusing conductive layers and thus each have a function of preventing anelectric field generated outside the transistor from affecting thesemiconductor layer in which the channel is formed (in particular, afunction of blocking an electric field such as static electricity). Whenthe back gate electrode is formed larger than the semiconductor layersuch that the semiconductor layer is covered with the back gateelectrode, the electric field blocking function can be enhanced.

Since the electrode 246 and the electrode 213 each have a function ofblocking an electric field from the outside, charges of chargedparticles and the like generated below the electrode 246 and above theelectrode 213 do not influence the channel formation region of thesemiconductor layer 242. As a result, degradation due to a stress test(e.g., a −GBT (Gate Bias-Temperature) stress test) in which a negativecharge is applied to a gate) is suppressed. Moreover, the electrode 246and the electrode 213 can block an electric field generated from thedrain electrode from affecting the semiconductor layer. Thus, a changein the rising voltage of the on-state current due to a change in drainvoltage can be suppressed. Note that this effect is significant in thecase where potentials are supplied to the electrode 246 and theelectrode 213.

Note that the BT stress test is a kind of acceleration test and canevaluate, in a short time, a change caused by long-term use (a changeover time) in characteristics of a transistor. In particular, the amountof change in the threshold voltage of a transistor by the BT stress testis an important indicator for examining the reliability. A smalleramount of change in threshold voltage by the BT stress test indicatesthat the transistor has higher reliability.

Moreover, by providing the electrode 246 and the electrode 213 andsetting the potentials of the electrode 246 and the electrode 213 to thesame value, the amount of change in threshold voltage is reduced.Accordingly, variation in electrical characteristics between a pluralityof transistors is reduced as well.

In addition, the transistor including the back gate electrode shows asmaller change in threshold voltage by a +GBT stress test, in which apositive charge is applied to a gate, than a transistor including noback gate electrode.

In addition, a back gate electrode which is formed using a conductivefilm having a light-blocking property can prevent, in the case wherelight is incident on the back gate electrode side, light from enteringthe semiconductor layer from the back gate electrode side. Therefore,photodegradation of the semiconductor layer can be prevented, anddeterioration in electrical characteristics of the transistor, such as ashift of the threshold voltage, can be prevented.

Furthermore, the electrode 213 may be provided between the insulatinglayer 418 and the insulating layer 439. Another insulating layer mayexist between the electrode 213 and the insulating layer 439.

According to one embodiment of the present invention, a transistor withfavorable reliability can be provided. Furthermore, a semiconductordevice with favorable reliability can be provided.

A transistor 420 illustrated as an example in FIG. 31(B1) is achannel-protective transistor that is one of bottom-gate transistors.The transistor 420 has a structure substantially similar to that of thetransistor 410 but is different in that the insulating layer 209 coversthe semiconductor layer 242. Furthermore, the semiconductor layer 242and the electrode 244 are electrically connected to each other in anopening portion formed by selectively removing part of the insulatinglayer 209 which overlaps with the semiconductor layer 242. Similarly,the semiconductor layer 242 and the electrode 245 are electricallyconnected to each other in another opening portion formed by selectivelyremoving part of the insulating layer 209 which overlaps with thesemiconductor layer 242. A region of the insulating layer 209 whichoverlaps with the channel formation region can function as a channelprotective layer.

A transistor 424 illustrated in FIG. 31(B2) is different from thetransistor 420 in that the electrode 213 that can function as a backgate electrode is provided over the insulating layer 439.

With the insulating layer 209, the semiconductor layer 242 can beprevented from being exposed at the time of forming the electrode 244and the electrode 245. Thus, the semiconductor layer 242 can beprevented from being reduced in thickness at the time of forming theelectrode 244 and the electrode 245.

Moreover, the distance between the electrode 244 and the electrode 246and the distance between the electrode 245 and the electrode 246 in thetransistor 420 and the transistor 424 are longer than those in thetransistor 410 and the transistor 411. Thus, the parasitic capacitancegenerated between the electrode 244 and the electrode 246 can bereduced. The parasitic capacitance generated between the electrode 245and the electrode 246 can also be reduced. According to one embodimentof the present invention, a transistor with favorable electricalcharacteristics can be provided.

A transistor 425 illustrated in FIG. 31(C1) is a channel-etchedtransistor that is one of bottom-gate transistors. In the transistor425, the electrode 244 and the electrode 245 are formed without usingthe insulating layer 209. Thus, part of the semiconductor layer 242which is exposed when the electrode 244 and the electrode 245 are formedis etched in some cases. On the other hand, since the insulating layer209 is not provided, the producibility of the transistor can beincreased.

A transistor 426 illustrated in FIG. 31(C2) is different from thetransistor 420 in that the electrode 213 that can function as a backgate electrode is provided over the insulating layer 439.

[Top-Gate Transistor]

A transistor 430 illustrated as an example in FIG. 32(A1) is a kind oftop-gate transistor. In the transistor 430, the semiconductor layer 242is provided over the insulating layer 409, the electrode 244 which is incontact with part of the semiconductor layer 242 and the electrode 245which is in contact with part of the semiconductor layer 242 areprovided over the semiconductor layer 242 and the insulating layer 409,the insulating layer 216 is provided over the semiconductor layer 242,the electrode 244, and the electrode 245, and the electrode 246 isprovided over the insulating layer 216.

In the transistor 430, the electrode 246 and the electrode 244 do notoverlap with each other, and the electrode 246 and the electrode 245 donot overlap with each other; therefore, the parasitic capacitancegenerated between the electrode 246 and the electrode 244 and theparasitic capacitance generated between the electrode 246 and theelectrode 245 can be reduced. Moreover, after the formation of theelectrode 246, an impurity element 255 is introduced into thesemiconductor layer 242 with the use of the electrode 246 as a mask, sothat impurity regions can be formed in the semiconductor layer 242 in aself-aligned (self-alignment) manner (see FIG. 32(A3)). According to oneembodiment of the present invention, a transistor with favorableelectrical characteristics can be provided.

Note that the introduction of the impurity element 255 can be performedwith an ion doping apparatus, an ion implantation apparatus, or a plasmatreatment apparatus.

As the impurity element 255, for example, at least one kind of elementof Group 13 elements and Group 15 elements can be used. Alternatively,in the case where an oxide semiconductor is used for the semiconductorlayer 242, it is also possible to use at least one kind of element of arare gas, hydrogen, and nitrogen as the impurity element 255.

A transistor 431 illustrated in FIG. 32(A2) is different from thetransistor 430 in that the electrode 213 and an insulating layer 217 areprovided. The transistor 431 includes the electrode 213 formed over theinsulating layer 409 and the insulating layer 217 formed over theelectrode 213.

As described above, the electrode 213 can function as a back gateelectrode. Thus, the insulating layer 217 can function as a gateinsulating layer. The insulating layer 217 can be formed using amaterial and a method similar to those of the insulating layer 216.

Like the transistor 411, the transistor 431 is a transistor that has ahigh on-state current for the area it occupies. That is, the areaoccupied by the transistor 431 can be small for a required on-statecurrent. According to one embodiment of the present invention, the areaoccupied by a transistor can be reduced. Therefore, according to oneembodiment of the present invention, a semiconductor device having ahigh degree of integration can be provided.

A transistor 440 illustrated as an example in FIG. 32(B1) is one oftop-gate transistors. The transistor 440 is different from thetransistor 430 in that the semiconductor layer 242 is formed after theformation of the electrode 244 and the electrode 245. Furthermore, atransistor 441 illustrated as an example in FIG. 32(B2) is differentfrom the transistor 440 in that the electrode 213 and the insulatinglayer 217 are provided. In the transistor 440 and the transistor 441,part of the semiconductor layer 242 is formed over the electrode 244 andanother part of the semiconductor layer 242 is formed over the electrode245.

Like the transistor 411, the transistor 441 is a transistor that has ahigh on-state current for the area it occupies. That is, the areaoccupied by the transistor 441 can be small for a required on-statecurrent. According to one embodiment of the present invention, the areaoccupied by a transistor can be reduced. Therefore, according to oneembodiment of the present invention, a semiconductor device having ahigh degree of integration can be provided.

Also in the transistor 440 and the transistor 441, after the formationof the electrode 246, the impurity element 255 is introduced into thesemiconductor layer 242 with the use of the electrode 246 as a mask, sothat impurity regions can be formed in the semiconductor layer 242 in aself-aligned manner. According to one embodiment of the presentinvention, a transistor with favorable electrical characteristics can beprovided. Furthermore, according to one embodiment of the presentinvention, a semiconductor device having a high degree of integrationcan be provided.

[S-Channel Type Transistor]

FIG. 33 illustrates a structure example of a transistor in which anoxide semiconductor is used for the semiconductor layer 242. Atransistor 450 illustrated as an example in FIG. 33 has a structure inwhich the semiconductor layer 242 b is formed over the semiconductorlayer 242 a and the semiconductor layer 242 c covers a top surface and aside surface of the semiconductor layer 242 b and a side surface of thesemiconductor layer 242 a. FIG. 33(A) is a top view of the transistor450. FIG. 33(B) is a cross-sectional view (a cross-sectional view in thechannel length direction) of a portion indicated by dashed-dotted lineX1-X2 in FIG. 33(A). FIG. 33(C) is a cross-sectional view (across-sectional view in the channel width direction) of a portionindicated by dashed-dotted line Y1-Y2 in FIG. 33(A).

In the transistor 450 illustrated in FIG. 33, the semiconductor layer242 b is provided over a projection of the insulating layer 409. Whenthe semiconductor layer 242 b is provided over the projection of theinsulating layer 409, the side surface of the semiconductor layer 242 bcan be covered with the electrode 243. That is, the transistor 450 has astructure in which the semiconductor layer 242 b can be electricallysurrounded by an electric field of the electrode 243. Such a transistorstructure in which a semiconductor layer in which a channel is formed iselectrically surrounded by an electric field of a conductive film iscalled a surrounded channel (s-channel) structure. In addition, atransistor having the s-channel structure is also referred to as“s-channel type transistor” or “s-channel transistor”.

In the s-channel structure, a channel is formed in the whole (bulk) ofthe semiconductor layer 242 b in some cases. In the s-channel structure,the drain current of the transistor can be increased, so that a higheron-state current can be obtained. Furthermore, the entire region of thechannel formation region formed in the semiconductor layer 242 b can bedepleted by an electric field of the electrode 243. Accordingly, theoff-state current of the transistor with the s-channel structure can befurther reduced.

Note that when the height of the projection of the insulating layer 409is increased and the channel width is reduced, the effects of thes-channel structure, such as an increase in on-state current and areduction in off-state current, can be enhanced. Furthermore, part ofthe semiconductor layer 242 a exposed in the formation of thesemiconductor layer 242 b may be removed. In this case, the sidesurfaces of the semiconductor layer 242 a and the semiconductor layer242 b may be aligned with each other.

Furthermore, as in a transistor 451 illustrated in FIG. 34, theelectrode 213 may be provided below the semiconductor layer 242 with aninsulating layer positioned therebetween. FIG. 34(A) is a top view ofthe transistor 451. FIG. 34(B) is a cross-sectional view of a portionindicated by dashed-dotted line X1-X2 in FIG. 34(A). FIG. 34(C) is across-sectional view of a portion indicated by dashed-dotted line Y1-Y2in FIG. 34(A).

FIG. 35 illustrates another example of a transistor with the s-channelstructure. In a transistor 452 illustrated as an example in FIG. 35, theelectrode 244 and the electrode 245 are provided over the semiconductorlayer 242 b and are not in contact with the side surfaces of thesemiconductor layer 242 b and the semiconductor layer 242 a. Theelectrode 244 is electrically connected to an electrode 434 via acontact plug in an opening provided in the insulating layer 418, theinsulating layer 439, and the insulating layer 419. The electrode 245 iselectrically connected to an electrode 435 via a contact plug in anopening provided in the insulating layer 418, the insulating layer 439,and the insulating layer 419.

According to one embodiment of the present invention, the area occupiedby a transistor can be reduced. Therefore, according to one embodimentof the present invention, a semiconductor device having a high degree ofintegration can be provided.

FIG. 36 illustrates another example of a transistor with the s-channelstructure. In a transistor 453 illustrated as an example in FIG. 36, thesemiconductor layer 242 b is formed over the semiconductor layer 242 a.The transistor 453 is a kind of bottom-gate transistor including a backgate electrode. FIG. 36(A) is a top view of the transistor 453. FIG.36(B) is a cross-sectional view (a cross-sectional view in the channellength direction) of a portion indicated by dashed-dotted line X1-X2 inFIG. 36(A). FIG. 36(C) is a cross-sectional view (a cross-sectional viewin the channel width direction) of a portion indicated by dashed-dottedline Y1-Y2 in FIG. 36(A).

The electrode 213 provided over the insulating layer 439 is electricallyconnected to the electrode 246 in an opening 247 a and an opening 247 bwhich are provided in the insulating layer 216, the insulating layer418, and the insulating layer 439. Thus, the same potential is suppliedto the electrode 213 and the electrode 246. Furthermore, either theopening 247 a or the opening 247 b may be omitted. Furthermore, both theopening 247 a and the opening 247 b may be omitted. In the case whereneither the opening 247 a nor the opening 247 b is provided, differentpotentials can be supplied to the electrode 213 and the electrode 246.

Note that the transistor 453 is shown as an example in which thesemiconductor layer 242 has a two-layer structure of the semiconductorlayer 242 a and the semiconductor layer 242 b.

FIG. 37 is an energy band structure diagram of a portion indicated bydashed-dotted line C3-C4 in FIG. 36(B). FIG. 37 illustrates the energyband structure of a channel formation region of the transistor 453.

In FIG. 37, Ec387 denotes the energy of the conduction band minimum ofthe insulating layer 418. The semiconductor layer 242 includes twolayers, i.e., the semiconductor layer 242 a and the semiconductor layer242 b; thus, the producibility of the transistor can be increased. Notethat the absence of the semiconductor layer 242 c allows the trap states390 to have a larger influence; however, as compared with the case wherethe semiconductor layer 242 has a single-layer structure, highfield-effect mobility can be obtained.

According to one embodiment of the present invention, a transistor withlow power consumption can be provided. Accordingly, an imaging device orthe like with low power consumption can be provided. According to oneembodiment of the present invention, a transistor with favorablereliability can be provided. Accordingly, an imaging device or the likewith favorable reliability can be provided.

This embodiment can be implemented in an appropriate combination withany of the structures described in the other embodiments.

REFERENCE NUMERALS

-   100: car-   101: steering-   102: dashboard-   108: airbag-   110: occupant protection device-   112: pixel driver circuit-   114: pixel-   115: imaging device-   117: insulating layer-   119: sensor-   120: control device-   123: wiring-   131: airbag device-   132: airbag device-   140: pixel portion-   141: pixel-   209: insulating layer-   213: electrode-   216: insulating layer-   217: insulating layer-   219: insulating layer-   220: well-   221: p-type semiconductor-   223: n-type semiconductor-   224: opening-   225: opening-   242: semiconductor layer-   243: electrode-   244: electrode-   245: electrode-   246: electrode-   252: peripheral circuit region-   255: impurity element-   260: circuit-   261: signal processing circuit-   262: column driver circuit-   263: output circuit-   264: circuit-   265: wiring-   266: wiring-   267: wiring-   268: wiring-   269: wiring-   270: circuit-   273: electrode-   277: insulating layer-   280: circuit-   281: transistor-   282: transistor-   283: formation region-   284: low-concentration p-type impurity region-   285: high-concentration p-type impurity region-   286: insulating layer-   287: electrode-   288: sidewall-   289: transistor-   290: circuit-   382: Ec-   386: Ec-   387: Ec-   390: trap state-   401: substrate-   403: insulating layer-   404: insulating layer-   405: insulating layer-   406: contact plug-   407: insulating layer-   408: insulating layer-   409: insulating layer-   410: transistor-   411: transistor-   414: element isolation layer-   415: insulating layer-   416: insulating layer-   418: insulating layer-   419: insulating layer-   420: transistor-   421: wiring-   422: wiring-   423: wiring-   424: transistor-   425: transistor-   427: wiring-   429: wiring-   430: transistor-   431: transistor-   434: electrode-   435: electrode-   439: insulating layer-   440: transistor-   441: transistor-   442: insulating layer-   444: wiring-   450: transistor-   451: transistor-   452: transistor-   453: transistor-   477: partition wall-   487: wiring-   488: wiring-   489: contact plug-   601: photoelectric conversion element-   602: transistor-   603: transistor-   604: transistor-   605: transistor-   606: capacitor-   607: node-   608: wiring-   609: wiring-   610: circuit-   611: wiring-   681: photoelectric conversion layer-   682: light-transmitting conductive layer-   686: electrode-   900: car-   1283: channel formation region-   1284: low-concentration n-type impurity region-   1285: high-concentration n-type impurity region-   5100: pellet-   5120: substrate-   5161: region-   103 a: door-   103 b: door-   104 a: door-   104 b: door-   108 c: semiconductor layer-   111 a: imaging device 111 b: imaging device 111 c: imaging device    112 a: imaging device 112 b: imaging device 112 c: imaging device-   113 a: imaging device-   113 b: imaging device-   114 a: imaging device-   114 b: imaging device-   133 a: airbag device-   133 b: airbag device-   134 a: airbag device-   134 b: airbag device-   242 a: semiconductor layer-   242 b: semiconductor layer-   242 c: semiconductor layer-   243 a: electrode-   243 b: electrode-   247 a: opening-   247 b: opening-   264 a: circuit-   264 b: counter circuit-   264 c: latch circuit-   272 c: semiconductor layer-   383 a: Ec-   383 b: Ec-   383 c: Ec-   487 a: conductive layer-   487 b: conductive layer-   686 a: conductive layer-   686 b: conductive layer

1. An imaging device comprising: a pixel portion comprising a pluralityof pixels arranged in a matrix; a driver circuit configured to convertan analog signal read from the plurality of pixels to a digital signal,wherein each of the plurality of pixels comprises a light-receivingelement, a first transistor, and a capacitor which is electricallyconnected to a cathode of the light-receiving element through the firsttransistor, wherein the driver circuit comprises a second transistor,wherein the second transistor is provided on a different layer from thefirst transistor, the capacitor, and the light-receiving element, andwherein the first transistor and the capacitor are overlapped with ananode of the light-receiving element.
 2. The imaging device according toclaim 1, wherein a first electrode of the capacitor is electricallyconnected to the cathode of the light-receiving element through thefirst transistor, and wherein a second electrode of the capacitor iselectrically connected to the anode of the light-receiving element. 3.The imaging device according to claim 1, wherein the first transistorcomprises an oxide semiconductor in a channel formation region.
 4. Theimaging device according to claim 1, wherein the light-receiving elementcomprises selenium.
 5. The imaging device according to claim 1, whereinthe imaging device is configured to operate in a global shutter system.6. The imaging device according to claim 1, further comprising a wiringincluding copper, wherein the wiring is electrically connected to thefirst transistor.